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Semiconductor device and manufacturing method thereof

A semiconductor and component technology, applied in the field of semiconductor components and their preparation

Pending Publication Date: 2020-12-29
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, variations in issues such as hot electron effects are present during the scaling process
Therefore, it is still challenging to improve quality, yield and reliability

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0051] The following description of the disclosure, accompanied by the accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the disclosure to which the disclosure, however, is not limited. In addition, the following embodiments can be properly integrated to complete another embodiment.

[0052] "An embodiment," "an embodiment," "an exemplary embodiment," "another embodiment," "another embodiment," etc. mean that the embodiments described in the present disclosure may include a particular feature, structure, or characteristic, however Not every embodiment must include the particular feature, structure or characteristic. Also, repeated use of the phrase "in an embodiment" does not necessarily refer to the same embodiment, but could be.

[0053] In order to make the present disclosure fully understandable, the following description provides detailed steps and structures. Obviously, the practice of the present dis...

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PUM

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Abstract

The present invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a control structure positioned in the substrate, a plurality offirst spacers positioned on two sidewalls of the control structure, a plurality of second spacers positioned on sidewalls of the plurality of first spacers, and a first doped region positioned in thesubstrate. The first doped region includes a lightly-doped area, a medium-doped area, and a heavily-doped area. The lightly-doped area of the first doped region abuts against one edge of the controlstructure. The medium-doped area of the first doped region abuts against the lightly-doped area of the first doped region. The heavily-doped area of the first doped region is enclosed by the medium-doped area of the first doped region.

Description

technical field [0001] This disclosure claims priority and the benefit of U.S. Formal Application No. 16 / 455,008 filed 2019 / 06 / 27, the contents of which are hereby incorporated by reference in their entirety. [0002] The present disclosure relates to a semiconductor element and a manufacturing method thereof. In particular, it relates to a semiconductor element with antithermal electron effect capability and a preparation method of the semiconductor element with antithermal electron effect capability. Background technique [0003] Semiconductor components are used in various electronic applications such as personal computers, mobile phones, digital cameras, and other electronic devices. The size of semiconductor devices continues to be scaled down to meet the demand for computing power. However, variations in issues such as hot electron effects occur during the scaling process. Therefore, it is still challenging to improve quality, yield and reliability. [0004] The ab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336H01L29/423
CPCH01L29/78H01L29/0603H01L29/0684H01L29/0649H01L29/66477H01L29/42356H01L29/7833H01L29/0847H01L29/6656H01L29/7835H01L29/6659H01L29/4933H01L21/266
Inventor 廖俊诚
Owner NAN YA TECH