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A suspended ridge waveguide structure and its preparation method

A ridge waveguide and ridge waveguide technology, which is applied in the directions of optical waveguides, light guides, instruments, etc., can solve the problems of large etching depth, chip cost, process compatibility, integration limit, and poor structural temperature stability.

Active Publication Date: 2022-04-22
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0008] (1) Since the refractive index of gallium arsenide material is higher than that of aluminum gallium arsenide material, in the process of preparing waveguide by deep etching method, the etching depth is too large, which requires extremely high process stability; the waveguide prepared by this method needs to be It is completed on a gallium arsenide substrate, so it is greatly limited in terms of chip cost, process compatibility, integration, etc.
[0009] (2) Although the method of wafer bonding can be largely compatible with the existing integrated circuit technology, the bonding process itself is relatively difficult, and the temperature stability of the structure is poor
In this method, due to the use of the characteristics of the buried oxide layer of the SOI sheet, the ridge waveguide can only be made of silicon materials, and other materials cannot be used. However, due to the serious two-photon absorption effect of silicon in the communication band, this method cannot be used. in the communication band

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  • A suspended ridge waveguide structure and its preparation method
  • A suspended ridge waveguide structure and its preparation method
  • A suspended ridge waveguide structure and its preparation method

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Embodiment Construction

[0043] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below through specific embodiments in conjunction with the accompanying drawings. It should be noted that the examples given in the present invention are given for illustration only and do not limit the scope of the present invention.

[0044] figure 1It is the schematic diagram of the suspended ridge waveguide three-dimensional structure of an embodiment of the present invention, with reference to the Cartesian coordinate system in Fig. The direction 2) of the waveguide plane, and the y-direction is the direction perpendicular to the electromagnetic wave propagation direction 1 within the waveguide plane. Such as figure 1 As shown, the suspended ridge waveguide structure of the present invention includes a ridge waveguide 4 , a suspended support structure 6 , a buffer layer 8 , an epitaxial growth layer 9 and a ...

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Abstract

A suspended ridge waveguide structure is provided, comprising: a ridge waveguide made of a material having a third-order nonlinear coefficient, the third-order nonlinear coefficient being greater than or equal to 2.7×10 ‑20 m 2 / W; The suspension support structure used to support the ridge waveguide, its material is the same as the ridge waveguide material, the suspension support structure is connected to the ridge waveguide, and the height in the material extension direction is smaller than the height of the ridge waveguide; the hole structure , which is located in the suspended support structure; and a substrate, which is connected to the suspended support structure; wherein the ridge waveguide is grown by epitaxy, and the ridge waveguide and the suspended support structure are arranged relative to the The substrate is suspended.

Description

technical field [0001] The invention relates to a suspension ridge waveguide structure and a preparation method thereof. Background technique [0002] The nonlinear optical effect and its application in the communication band have attracted extensive attention in recent years. Since its application mainly involves the phase change and energy conversion of optical signals in nonlinear media, this effect can be triggered in a very short time. Common nonlinear optical effects mainly include: second harmonic generation, self-phase modulation effect, four-wave mixing effect, supercontinuum generation, etc. The latter three optical nonlinear effects are mainly based on the Kerr nonlinear effect (third-order nonlinear). Utilizing the third-order optical nonlinear effect of materials, functions such as wavelength conversion, generation of supercontinuum spectrum and optical frequency comb can be realized in the field of optical communication. It has very great application prospec...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/12G02B6/13G02B6/136G02F1/365
CPCG02B6/12G02B6/13G02B6/136G02F1/365G02B2006/12083G02B2006/12097G02B2006/12166G02B2006/12176
Inventor 王霆丛慧冯琦张建军
Owner INST OF PHYSICS - CHINESE ACAD OF SCI