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Read retry threshold voltage selection

A threshold voltage, read retry technology, applied in read-only memory, electronic digital data processing, static memory, etc., can solve the problems of increasing read operation delay, not achieving service quality, incorrect data reading, etc.

Pending Publication Date: 2021-01-29
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In some cases, the voltage levels may shift too far for some cells and cause the data to be read incorrectly for those cells and / or cause the read operation to fail, in which case the device may attempt to retry the read Fetch operation
Retrying a read operation may increase the latency of the read operation, so Quality of Service (QoS) requirements may not be met

Method used

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Examples

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Embodiment Construction

[0023] Certain aspects and embodiments of the disclosure are provided below. It is obvious to those skilled in the art that some of these aspects and embodiments can be applied independently and some of them can be applied in combination. In the following description, for purposes of explanation, specific details are set forth in order to provide a thorough understanding of the embodiments. It will be apparent, however, that various embodiments may be practiced without these specific details. The drawings and description are not limiting.

[0024] The ensuing description provides examples, and is not intended to limit the scope, applicability, or configuration of the disclosure. Rather, the ensuing description of the example embodiments will provide those skilled in the art with an enabling description for implementing example embodiments. It being understood that various changes may be made in the function and arrangement of elements without departing from the spirit and s...

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PUM

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Abstract

Embodiments describe a method for reading data from storage that includes selecting a block of memory to read, identifying a read retry table for reading the block, determining that the read retry table for the selected block of memory needs to be updated, and reading the block of memory using a new set of read threshold voltages from the read retry table. Responsive to a successful read operationusing the new set of voltages, the method can also include replacing the initial set of read voltages in the first field with the new set of read voltages, and filling the plurality of subsequent fields in the read retry table with additional sets of read threshold voltages identified from a read retry neighbor table, where at least one of the additional sets of read voltages is closest in distance to the initial set of read voltages in read voltage space.

Description

technical field [0001] The present disclosure relates to a read retry threshold voltage selection. Background technique [0002] Non-volatile memory devices such as solid-state drives (SSDs) are finding new applications in the consumer electronics field. For example, they are replacing hard disk drives (HDDs), which typically include rapidly spinning magnetic disks (platters). Non-volatile memory, sometimes referred to as "flash memory" or "flash memory devices" (for example, NAND and NOR flash memory devices), is used in media storage, cameras, mobile phones, mobile computers, laptops computer, USB flash drive, etc. Non-volatile memory can provide a relatively reliable, compact, cost-effective, and easily accessible method of storing data when the power is turned off. [0003] NAND flash memory devices typically consist of blocks comprising multiple pages. Each page may include multiple NAND flash cells, for example hundreds or thousands of NAND flash cells. NAND flash...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C16/04G11C16/34
CPCG11C16/26G11C16/0483G11C16/3404G11C11/5642G11C29/021G11C29/028G11C2029/0409G11C29/52G06F3/0604G06F3/0659G11C11/5671G06F3/0679
Inventor 吕宣宣张帆熊晨荣王浩博美萨姆·阿沙迪
Owner SK HYNIX INC
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