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Method for manually controlling single-layer WS2 in-plane anisotropy

An artificially controlled, anisotropic technology, used in semiconductor/solid-state device testing/measurement, measuring devices, instruments, etc., to achieve the effect of improving piezoelectric performance

Active Publication Date: 2021-02-09
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For the new two-dimensional piezoelectric semiconductor WS 2 In terms of its essence, the maximum output current of the dyna

Method used

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  • Method for manually controlling single-layer WS2 in-plane anisotropy
  • Method for manually controlling single-layer WS2 in-plane anisotropy
  • Method for manually controlling single-layer WS2 in-plane anisotropy

Examples

Experimental program
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Effect test

Embodiment 1

[0031] An artificially controlled single-layer WS 2 The method of in-plane anisotropy includes the following steps:

[0032] (1) cleaning SiO2 2 / Si substrate; WS was loaded separately in a small boat in a tube furnace 2 Powder 30-50mg and SiO 2 / Si substrate, and place them in the center of the heating zone and at the furnace mouth respectively;

[0033] (2) Open the gas cylinder valve, pass in nitrogen or argon, and set the direction of the gas flow from SiO 2 / Si substrate direction flows towards WS 2 The direction of the powder; first ventilate with a flow rate of 60-70ml / sccm for 5-10 minutes to expel the air inside, and then start to heat up, heating to 1100-1150°C within 50-60 minutes; during the heating process, when the temperature rises to 1050- When the temperature is 1080°C, first close the gas cylinder valve, use the three-way valve to change the direction of the air flow, and set the direction of the air flow from WS to 2 Powder to SiO 2 / Si substrate;

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Abstract

The invention belongs to the technical field of in-plane anisotropy, piezoelectricity and polarized light detection, and discloses a method for manually controlling single-layer WS2 in-plane anisotropy. The method comprises the following steps that a single layer WS2 is obtained on a SiO2/Si substrate through a physical vapor deposition technology, then the single layer WS2 on the SiO2/Si substrate is transferred to a PDMS flexible substrate through a wet transfer technology, the PDMS substrate is accurately stretched through a piezoelectric device, and the larger the stress applied in the stretching process is, the larger the strain generated by the WS2 is; therefore, the single layer WS2 which does not have anisotropy in a polarization Raman spectrum originally generates obvious anisotropy, and when the stress in the Armchair direction is 3.84%, the anisotropy rate reaches 1.54. And the generation of in-plane anisotropy is beneficial to enhancing in-plane polarization, so that the WS2 piezoelectric property is improved, and the method can be widely applied to the fields of angle-dependent polarized light detection and the like.

Description

technical field [0001] The invention belongs to the technical field of in-plane anisotropy, piezoelectricity and polarized light detection, and particularly relates to an artificially controlled single-layer WS 2 In-plane anisotropy method. Background technique [0002] Angle-resolved polarized Raman is a method to judge whether a material has in-plane anisotropy. For some samples prepared by mechanical exfoliation, it is difficult to judge the crystal orientation of the sample due to the random shape, but angle-resolved polarized Raman can solve this problem. For black phosphorus, black arsenic, and tellurium prepared by mechanical exfoliation, angle-resolved polarized Raman can be used to determine the crystal orientation of the sample. In addition, for piezoelectric materials, angle-resolved polarized Raman can be used to determine the polarity of the material, thereby predicting the piezoelectric properties of the material. [0003] With the development of piezoelectr...

Claims

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Application Information

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IPC IPC(8): H01L21/66G01N21/63G01N21/65G01R29/22
CPCH01L22/12H01L22/14H01L22/20G01N21/65G01N21/63G01R29/22
Inventor 李翎杨玉珏霍能杰
Owner GUANGDONG UNIV OF TECH
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