Semiconductor structure and method for fabricating semiconductor structure

Abstract

The invention provides a method for fabricating a semiconductor structure. The method comprises the following steps: forming a plurality of crystal grain regions on a semiconductor substrate; forming,via a first mask, a first product region of the first feature in each die region; forming, via a second mask, a second product region of a second feature in each die region; forming a third feature in a third product region of each die region via a third mask; forming a fourth feature in a fourth product region of each die region via a fourth mask; and forming, via the first, second, third, and fourth masks, an alignment region of a fifth feature between the first, second, third, and fourth product regions of each die region. The first product region has no second, third, and fourth features.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor structures, and more particularly, to methods of fabricating semiconductor structures. Background technique [0002] Integrated circuits (ICs) are becoming increasingly important. Applications using integrated circuits are used by millions of people. Examples of these applications include cell phones, smartphones, tablets, laptops, notebooks, personal digital assistants (PDAs), wireless email terminals, digital music (MP3) audio and video players, and portable wireless web pages (Web ) browser. Integrated circuits increasingly include powerful and efficient on-board data storage and logic circuits for signal control and processing. [0003] The semiconductor industry has experienced rapid growth due to the increasing integration density and complexity of various electronic components. As functionality and complexity increase, the area of ​​integrated circuits increases. Contents of the...

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As functionality and complexity increase, the area of ​​integrated circuits increases

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