Double-frequency high-gain microstrip slot antenna loaded with bowknot type parasitic structure

A technology of parasitic structure and microstrip slot, which is applied in the direction of slot antenna, antenna, resonant antenna, etc., can solve the problems of single communication task and low remote radiation gain, and achieve the effect of increasing far-field radiation gain and improving characteristics

Pending Publication Date: 2021-03-12
YULIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The object of the present invention is to provide a dual-frequency high-gain microstrip slot antenna with a bow-tie parasitic structure for the low-range radiation gain of the planar low-

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  • Double-frequency high-gain microstrip slot antenna loaded with bowknot type parasitic structure
  • Double-frequency high-gain microstrip slot antenna loaded with bowknot type parasitic structure
  • Double-frequency high-gain microstrip slot antenna loaded with bowknot type parasitic structure

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Embodiment Construction

[0026] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0027] In order to solve the problem of single operating frequency point of the microstrip slot antenna, low far-field radiation gain, and complex parasitic structure difficult to optimize, the present invention adds a microstrip slot antenna dielectric substrate geometric structure, Dielectric substrates with the same composition materials, and two symmetrical and identical triangular parasitic units on the upper surface of the upper dielectric substrate, optimize a single-frequency bidirectional radiation microstrip slot antenna into a dual-frequency high-gain unidirectional radiation strip Microstrip slot antenna with parasitic structure.

[0028] See eg Figure 1-4 , the high-gain dual-band microstrip slot antenna designed in the present invention has two identical dielectric substrates, which are the first dielectric substrate 10 on the ...

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Abstract

A double-frequency high-gain microstrip slot antenna loaded with a bowknot type parasitic structure comprises a first dielectric substrate and a second dielectric substrate, two triangular parasitic structures are etched on the upper surface of the first dielectric substrate and are in rotational symmetry, and a rectangular metal patch is etched on the upper surface of the second dielectric substrate. A rectangular gap and a non-metal circular structure are etched on the lower surface of the second dielectric substrate, a feed via hole is formed in the rectangular metal patch, and the radius of the non-metal circular structure is larger than that of the feed via hole and coincides with the circle center of the feed via hole. Except for the rectangular gap and the non-metal circular structure, the lower surface of the second dielectric substrate is completely covered with metal to form an antenna grounding plate. According to the invention, the working frequency point of the antenna isexpanded by using a simple parasitic structure, the far-field radiation gain of the antenna is improved, and the characteristics of the microstrip slot antenna are greatly improved.

Description

technical field [0001] The invention belongs to the field of wireless communication, and relates to a dual-frequency high-gain microstrip slot antenna loaded with a bowknot parasitic structure. Background technique [0002] The antenna is one of the essential key components of the wireless mobile communication system, and the performance of the antenna has a crucial impact on the performance of the entire wireless communication system. After decades of exploration by researchers and engineers, there are already many types of antennas. There are parabolic antennas, planar antennas, horn antennas, monopole antennas, and more. Each antenna has its own advantages and disadvantages. In comparison, planar structure antennas have been widely used in wireless mobile communication systems due to their low-profile characteristics. At the same time, the antenna device has many properties, such as; far-field radiation pattern, far-field radiation gain, radiation efficiency, port para...

Claims

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Application Information

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IPC IPC(8): H01Q1/38H01Q13/10H01Q1/48H01Q1/50H01Q9/04
CPCH01Q1/38H01Q13/106H01Q1/50H01Q1/48H01Q9/0407
Inventor 李海雄张敬全赵鹏赵俞
Owner YULIN UNIV
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