A Method for Measuring Stress Gradients in Different Directions of Thin Films

A technology of stress gradient and thin film, applied in measuring devices, force/torque/work measuring instruments, instruments, etc., can solve problems such as deviation of measurement results, achieve the effects of reducing difficulty, simple calculation, and accurate test results

Active Publication Date: 2021-12-24
RUISHENG NEW ENERGY DEV CHANGZHOU +2
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for measuring the stress gradient in different directions of the film, which is used to solve the problem of large deviation in the measurement results in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Method for Measuring Stress Gradients in Different Directions of Thin Films
  • A Method for Measuring Stress Gradients in Different Directions of Thin Films
  • A Method for Measuring Stress Gradients in Different Directions of Thin Films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Reference attached figure 1 As shown, the present embodiment discloses a method for measuring stress gradients in different directions of a thin film, comprising steps:

[0048] T1. Obtain the slope equivalent coefficient K of the film in the first direction based on the S11 stress gradient through simulation X1 , Slope equivalent coefficient K based on S22 stress gradient X2 ;

[0049] T2. Obtain the slope equivalent coefficient K of the film in the second direction based on the S11 stress gradient through simulation Y1 , Slope equivalent coefficient K based on S22 stress gradient Y2 ;

[0050] T3. Obtain the slope K in the first direction of the film through actual testing 1 and the slope K in the second direction 2 ;

[0051] T4, according to K X1 、K X2 、K Y1 、K Y2 , and K 1 、K 2 Calculate the stress gradient in the first direction and the second direction of the film.

[0052] It should be noted that, in this embodiment, the above steps T1, T2, and T3 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for measuring stress gradients in different directions of a thin film, comprising the steps of: obtaining the slope equivalent coefficient K of the thin film based on the S11 stress gradient in the first direction through simulation X1 , Slope equivalent coefficient K based on S22 stress gradient X2 ; Obtain the slope equivalent coefficient K of the film in the second direction based on the S11 stress gradient through simulation Y1 , Slope equivalent coefficient K based on S22 stress gradient Y2 ; Obtain the slope K in the first direction of the film through actual testing 1 and the slope K in the second direction 2 ; According to the K X1 、K X2 、K Y1 、K Y2 , and K 1 、K 2 Calculate the stress gradients in the first direction and the second direction of the film. The invention has higher measurement accuracy and is simpler.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor devices, in particular to a method for measuring stress gradients in different directions of a thin film. 【Background technique】 [0002] In the field of MEMS, stress gradients generally exist in the device structure, causing structural deformation and affecting device performance. [0003] At present, the commonly used method for measuring the stress gradient is: setting up a series of single-end fixed cantilever beam structures with different lengths, and then measuring the warpage of the ends of the beams with different lengths, and then bringing it into the formula to calculate the stress gradient. This method usually assumes that the stress gradients of S11 (positive stress in the X-axis direction) or S22 (positive stress in the Y-axis direction) are consistent. [0004] However, in actual situations, the stress magnitudes of S11 or S22 of the film are often inconsistent, so that the above cal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G01L5/00
CPCG01L5/00G01L5/0047
Inventor 沈宇童贝石正雨段炼
Owner RUISHENG NEW ENERGY DEV CHANGZHOU
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap