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Hollow ultrahigh frequency resonator

An ultra-high frequency and resonator technology, applied in the field of resonators, can solve the problems of small metallization rate, achieve good piezoelectric performance, remove clutter, and increase the relative metallization rate

Pending Publication Date: 2021-03-26
武汉敏声新技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The structure of the new XBAR is relatively simple, including the metallized positive and negative electrode systems on the upper surface, but the metallization rate is very small

Method used

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Embodiment Construction

[0022] The technical solutions in the embodiments of the present invention will be described below in conjunction with the embodiments of the present invention, and clearly, the described embodiments are merely embodiments of the invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained in the art without creative labor are not made in the premise of creative labor.

[0023] It should be noted that the features in the present invention in the present invention can be combined with each other in the case of an unable conflict.

[0024] The present invention will be further described below in connection with the specific embodiments, but is not limited as the present invention.

[0025] In this embodiment, the hollow-type ultra-high frequency resonator structure is etched by the upper or all of the piezoelectric layer, which is a ring piezoelectric layer such that the stress in the piezoelectric layer is released, and th...

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Abstract

The invention relates to the technical field of resonators, in particular to a hollow ultrahigh frequency resonator, which comprises a substrate, a piezoelectric layer and an electrode, and is characterized in that the piezoelectric layer is arranged on the substrate; the upper surface of the piezoelectric layer is partially or completely etched to form an annular piezoelectric layer, and the first electrode and the second electrode are deposited on the piezoelectric layer. A part of the upper part or the whole piezoelectric layer of the ultrahigh frequency resonator is etched to form an annular piezoelectric layer, so that the stress in the piezoelectric layer is released, the relative metal rate of the electrode is improved, the piezoelectric performance of the piezoelectric layer is better expressed, the piezoelectric layer generates a stronger coupling effect. Therefore, the electromechanical coupling coefficient of the resonator is increased, and part of clutters in an impedance curve can be removed.

Description

Technical field [0001] The present invention belongs to the technical field of resonator, and in particular, to a hollow ultra-high frequency resonator. Background technique [0002] The 5G / 6G era has arrived, the mobile communication terminal begins with a higher frequency and greater bandwidth to the filter, so that the performance of the resonator has put forward higher requirements. Sonic filtering technology is particularly important for its excellent high-frequency use performance, so high-quality factor resonator assembly is critical to low insertion loss, steep filter skirt, high-in-band suppression filter The role, especially high-frequency resonators. [0003] This is a lithium-based tantate (Litao) 3 ) / Lithium niobate (Linbo 3 Surface Wave (SAW) and ALN-based body acoustic wave (BAW) techniques put forward severe challenges, which are usually lower acoustic coupling, narrower bandwidth, and the high-frequency size requirement is getting smaller. limit. [0004] A l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02
CPCH03H9/02015H03H9/02086
Inventor 孙成亮谷曦宇国世上刘婕妤谢英曲远航邹杨徐沁文
Owner 武汉敏声新技术有限公司
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