Thermo-optical phase shifter and preparation method thereof
An optical phase shifter and phase shifter technology, applied in the semiconductor field, can solve problems such as low phase shifting rate, and achieve the effects of reducing overall resistance, increasing phase shifting speed, and improving design dimensions
Pending Publication Date: 2021-04-16
UNITED MICROELECTRONICS CENT CO LTD
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Problems solved by technology
[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a thermo-optic phase shifter and its preparation method, in order to solve the problem of low phase shifting rate existing in the thermo-optic phase shifter
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preparation example Construction
[0092] Correspondingly, this embodiment also provides a preparation method of a thermo-optic phase shifter, the preparation method comprising:
[0093] providing a semiconductor substrate 101;
[0094] Forming a propagation waveguide 102 and at least one doped resistance line 104 in the semiconductor substrate 101, wherein the doped resistance line 104 is located on at least one side of the propagation waveguide 102;
[0095] forming a first insulating layer 105 on the upper surface of the semiconductor substrate 101, the surface of the propagation waveguide 102, and the surface of the doped resistance line 104;
[0096] Forming at least one metal resistance line 106 on the upper surface of the first insulating layer 105, wherein the projections of the metal resistance line 106 and the doped resistance line 104 in the vertical direction do not overlap;
[0097] Forming a second insulating layer 107 on the upper surface of the first insulating layer 105 and the surface of the ...
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The invention provides a thermo-optical phase shifter and a preparation method thereof. The thermo-optical phase shifter comprises: a propagation waveguide formed in a semiconductor substrate; at least one doped resistance wire formed in the semiconductor substrate and positioned on at least one side of the propagation waveguide; a first insulating layer formed on the surfaces of the semiconductor substrate, the propagation waveguide and the doped resistance wire; at least one metal resistance wire formed on the upper surface of the first insulating layer, wherein projections of the metal resistance wire and the doped resistance wire in the vertical direction are not overlapped; a second insulating layer formed on the surfaces of the first insulating layer and the metal resistance wire; first through hole connecting wires at least formed at two ends of the doped resistance wire; and second through hole connecting wires at least formed at two ends of the metal resistance wire. The first through hole connecting wires and the second through hole connecting wires are connected through conductive wires, so that the doped resistance wire and the metal resistance wire are electrically connected, and two power supply ends are led out. According to the thermo-optical phase shifter and the preparation method thereof, the problem that an existing thermo-optical phase shifter is low in phase shifting rate is solved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a thermo-optical phase shifter and a preparation method thereof. Background technique [0002] With the development of semiconductor technology, the size of chips has been reduced to the limit. In order to further develop chips with higher performance and break through Moore's Law, silicon-based optoelectronic chips that can improve device performance without reducing the device volume have emerged as the times require. Silicon-based optoelectronic chips generally modulate the intensity, amplitude, frequency, phase, polarization, and propagation direction of light through electro-optic, thermo-optic, and acousto-optic. Among them, thermo-optic phase shifters that use thermo-optic to achieve light phase changes are A commonly used functional device in silicon-based optoelectronic chips. [0003] At present, the Mach-Zehnder Interferometer (MZI) composed of thermo-optical ...
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Inventor 刘胜平田野李强赵洋王玮
Owner UNITED MICROELECTRONICS CENT CO LTD