Unlock instant, AI-driven research and patent intelligence for your innovation.

Metal joint, metal joint production method, semiconductor device, and wave guide path

A manufacturing method and joint body technology, applied in semiconductor devices, waveguides, manufacturing tools, etc., can solve the problems of insufficient solder strength, solder exudation, weight increase, etc., and achieve the effect of high mechanical strength and little effect of contact corrosion

Active Publication Date: 2021-04-30
MITSUBISHI ELECTRIC CORP
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of screw fastening, a protrusion for screw fastening is required, resulting in an increase in size and weight
In addition, in the case of solder joints, there are problems such as insufficient strength of the solder itself and bleeding of the solder to parts other than the joint.
Furthermore, in the case of brazing, there are problems such as thermal deformation of the waveguide member due to heating during brazing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal joint, metal joint production method, semiconductor device, and wave guide path
  • Metal joint, metal joint production method, semiconductor device, and wave guide path
  • Metal joint, metal joint production method, semiconductor device, and wave guide path

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0025] figure 1 It is an explanatory diagram for implementing the joining method of the metal joined body according to Embodiment 1 of the present invention. figure 1 The metal bonded body shown in (a) shows the state before the start of bonding, and Cu—Zn layer 2 , Cu layer 3 , and Ag layer 4 are sequentially formed on the surface of each metal substrate 1 . figure 1 (b) shows the state which made the Ag layer 4 of each base material 1 contact each other. Here, the shape of the metal base material 1 is, for example, a cubic block, and metal layers are sequentially formed on a part or the entire surface of the metal base material 1 .

[0026] exist figure 1 In the state shown in (b), heat treatment is performed at a temperature of 300° C. to less than 400° C. while applying pressure, and Cu—Zn layer 2 , Cu layer 3 , and Ag layer 4 are solid-phase bonded. figure 1 (c) shows the metal bonded body 5 completed by solid phase bonding. In this metal bonded body 5 , substrates 1 ...

Embodiment approach 2

[0047] Figure 5 It is an explanatory diagram showing a method of joining waveguides according to Embodiment 2 of the present invention. In this embodiment, a rectangular waveguide (also referred to as a rectangular waveguide) having a cavity (cavity) having a rectangular cross section inside is described as an example.

[0048] Figure 5 A cross-sectional view of the waveguide in this embodiment is shown. Figure 5 The waveguide shown in (a) shows the state before the start of bonding, and is composed of a metal upper member 11 and a lower member 12 joined to the upper member 11 and capable of forming a rectangular cavity inside. The upper member 11 and the lower member 12 are elongated, and the direction in which microwaves are transmitted is defined as the vertical direction.

[0049] The upper member 11 and the lower member 12 are made of brass. The brass constituting the upper member 11 and the lower member 12 is a Cu-Zn alloy containing 60 atomic % to 70 atomic % of ...

Embodiment approach 3

[0060] Figure 7 It is an explanatory diagram showing a bonding method for implementing the semiconductor device according to Embodiment 3 of the present invention. The semiconductor device of this embodiment is a device in which a semiconductor element is bonded to an insulating substrate via a metal bonding body. Examples of the semiconductor element include those mainly composed of Si (silicon), GaAs (gallium arsenide), SiC (silicon carbide), GaN (gallium nitride), diamond, and the like. In addition, examples of the insulating substrate include ceramic substrates, DCB (Direct Copper Bond) substrates, and the like.

[0061] Figure 7 A cross-sectional view of the semiconductor device in this embodiment is shown. Figure 7 The semiconductor device shown in (a) shows the state before the start of bonding, and the Cu—Zn layer 2, the Cu layer 3, and the Ag layer are sequentially formed on the lower surface of the semiconductor element 21, that is, the surface facing the insul...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

This metal joint (5) comprises an Ag-Cu-Zn layer (7) on both sides of which a Cu-Zn layer (6) has been joined. When the entirety of the Ag-Cu-Zn layer (7) amounts to 100 atm%, the Cu component is between 1 atm% and 10 atm% inclusive, the Zn component is between 1 atm% and 40 atm% inclusive, and the Ag component is the remainder. When the entirety of the Cu-Zn layer (6) amounts to 100 atm%, the Zn component is between 10 atm% and 40 atm% inclusive, and the Cu component is the remainder. Therefore, without being limited to aluminum-based materials, metal base materials can be joined to one another and a metal joint (5) having high mechanical strength can also be obtained.

Description

technical field [0001] The present invention relates to a metal junction used in a semiconductor device, a waveguide, and the like, a method for manufacturing the metal junction, and the like. Background technique [0002] In semiconductor devices, solder bonding (soldering) is generally used as a method of bonding metals such as metal wiring members. In recent years, from the viewpoint of energy saving, the development of semiconductor devices using silicon carbide (SiC), gallium nitride (GaN), etc., which have a small power loss, as semiconductor elements has been actively carried out. Since these semiconductor elements operate at high temperatures of 200° C. or higher, the operating temperature of semiconductor devices also increases year by year. Under such circumstances, it has been difficult to secure heat resistance and lifetime reliability in conventional solder joints. As a joining method instead of solder joining, a joining method using a sinterable metal or a me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/00
CPCB23K20/008B23K20/026B23K20/16B23K20/227B23K20/233B23K20/2336B23K2103/04B23K2103/10B23K2103/12B23K2103/08H01L24/29H01L24/32H01L24/83H01L2224/2908H01L2224/32245H01L2224/83801B32B37/06B32B2311/08B32B2311/20B32B2311/12H01L2224/29083H01L2224/32503
Inventor 井岛乔志山崎浩次
Owner MITSUBISHI ELECTRIC CORP