A method for forming an interconnection structure and an interconnection structure

Abstract

An interconnection structure and a forming method thereof, the method comprising: forming a first groove in a first region of a dielectric layer, forming a second groove in a second region of the dielectric layer, the width of the first groove being smaller than that of the second The width of the trench; a barrier layer is formed on the sidewall of the first trench and the sidewall of the second trench, and the top surface of the barrier layer is lower than the top surface of the dielectric layer; then the first trench side and the second trench The dielectric layer at the side of the second groove is etched, so that the top surface of the remaining dielectric layer on the second region is higher than the top surface of the remaining dielectric layer on the first region; after that, the first groove and the second forming a trench filling material layer in the trench and on top of the dielectric layer and the barrier layer; grinding the trench filling material layer and the dielectric layer to expose the top surface of the barrier layer to form a first conductive fill in the first trench layer, forming a second conductive filling layer in the second trench. The method reduces the height difference between the top surface of the first conductive filling layer and the top surface of the second conductive filling layer.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for forming an interconnection structure and the interconnection structure. Background technique [0002] In the manufacturing process of semiconductor integrated circuits, the interconnection process is a common processing process, and the interconnection process is usually used to form structures such as metal interconnection lines. The existing interconnection process usually includes, for example, forming a barrier layer on the substrate, and Forming trenches on the barrier layer, and depositing trench filling materials (such as metal materials used to form metal interconnections) in the trenches, etc., and usually requires chemical mechanical polishing (CMP) to remove Excess barrier and trench fill material. In the CMP process, because the barrier layer and the trench filling material layer in the area with a large trench size are generally more likely to be...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem in the prior art that the interconnection structure formed by the formation method of the interconnection structure affects the stability and reliability of the semiconductor device

Images