Manufacturing method of piezoresistive gauge pressure sensor
A technology of a pressure sensor and a manufacturing method, which is applied in the direction of fluid pressure measurement by changing ohmic resistance, can solve problems such as zero point drift, and achieve the effects of reducing process deviation, suitable for mass production, and good uniformity.
Active Publication Date: 2022-07-29
长芯科技(上海)有限公司
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Problems solved by technology
[0005] How to well solve the problem of zero drift caused by process deviation and manufacture high-quality piezoresistive pressure sensors is the subject that the applicant is committed to solving and wants to overcome
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[0045] The preferred solutions of the present invention will be further described below with reference to the accompanying drawings, so that the technical solutions of the present application can be better understood.
[0046] A method for manufacturing a piezoresistive gauge pressure sensor, comprising step 1: using deep reactive ion etching on the front side of an SOI substrate provided with an intermediate buried oxygen layer to form an etching stop layer for making a cavity. Deep groove one of the annular structure; the intermediate buried oxygen layer acts as a corrosion stop layer when making a cavity. The deep groove one adopts the design of a closed annular structure, and the deep groove one defines the lateral dimension of the pressure sensor cavity. Then use dry etching to remove the top silicon layer and the middle buried oxide layer in deep groove one, and then use deep reactive ion etching to etch the silicon base of SOI substrate in deep groove one; The depth is...
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The invention discloses a manufacturing method of a piezoresistive gauge pressure sensor; a deep groove 1 of an annular structure for an etching stop layer is formed on the front surface of an SOI substrate by using a deep reactive ion etching method; SOI There is an intermediate buried oxygen layer in the substrate; the buried oxygen layer is used to make the etch stop layer when the cavity is made; the silicon oxide is filled in the deep groove one, and then the silicon oxide layer on the surface is removed, and the top layer of the SOI substrate is used as the seed layer, The epitaxial silicon layer is grown; the four piezoresistors of the pressure sensor are fabricated on the epitaxial silicon layer and the Wheatstone bridge structure is formed; Deep groove 2; fill silicon oxide in deep groove 2, and selectively remove silicon oxide at the bottom of deep groove 2 by dry etching method; use silicon wet etching solution to form a final cavity. The technical solution solves the problem of zero point drift caused by process deviation, and the quality of the sensor produced is higher than that of the sensor produced by the traditional process.
Description
technical field [0001] The present invention relates to a preparation method of a pressure sensor, in particular to a preparation method of a piezoresistive gauge pressure sensor. Background technique [0002] The current mainstream electrical response pressure sensors respond to the pressure in real time by converting the deformation of the device under the action of pressure into changes in the electrical performance parameters of the sensor. Among them, piezoresistive pressure sensors have been widely used because of their simple preparation process, high response stability, strong anti-interference ability, high sensitivity, good linearity, and simple and easy subsequent processing circuits, and have become a research hotspot in the field of current flexible pressure sensors. [0003] Piezoresistive pressure sensors consist of three main components: a piezoresistor, a stress film, and a silicon island. The Wheatstone bridge is composed of four piezoresistors, which conv...
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IPC IPC(8): G01L9/06
CPCG01L9/06
Inventor 陈志宝
Owner 长芯科技(上海)有限公司