Light-emitting device, display device having same, and lighting device
A light-emitting device and light-emitting layer technology, applied in the field of optics, can solve the problems that the light extraction structure is not suitable for small-area light-emitting devices, etc., achieve significant light extraction effects, improve light extraction efficiency, and prolong service life
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Embodiment 1
[0054]The light emitting device provided in this embodiment is a top emission light emitting device, such asfigure 1 As shown, the light transmissive substrate 10, the light-emitting function layer 20, and the light extraction function layer 30, the light-emitting function layer 20, the light-emitting function layer 20, the light-emitting function layer 20, and the light-emitting layer 220, the electron-injection transmission layer and the reflective electrode 230. And the light-transmitting electrode 210 and the reflective electrode 230 are independently located on both sides of the light-emitting layer 220, and the light extraction function layer 30 includes a light extraction layer; the light emitting device further includes a pixel isolation structure disposed on the first surface of the transparent substrate 10. A 3 * 3 * 3 (RGB) sub-pixel area is formed between the pixel isolation structure; the light-emitting function layer 20 is disposed in one one in the sub-pixel region; t...
Embodiment 2
[0059]The difference between the light emitting device provided in this embodiment is:
[0060]The thickness T of the light-emitting unit is 1 μm, wherein the total thickness of each functional layer of the light emitting unit is 150 nm, the light transmitting electrode ITO is 100 nm, the interface layer NPB is 50 nm, and the light extraction function layer has a thickness of 700 nm. The shortest length W of the light-emitting surface of the above light-emitting unit is 10 μm.
Embodiment 3
[0062]The difference between the light emitting device provided in this embodiment is:
[0063]The thickness T of the light-emitting unit is 1 μm, wherein the total thickness of each functional layer of the light emitting unit is 150 nm, the light transmitting electrode ITO is 100 nm, the interface layer NPB is 50 nm, and the light extraction function layer has a thickness of 700 nm. The light-emitting surface of the light-emitting unit is an elliptical, and the shortest length W is 20 μm.
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Abstract
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