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Wafer bonding quality detection method and system

A quality inspection method and wafer bonding technology, which are applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., and can solve the problems of non-destructive detection of electrical characteristics of bonding interfaces.

Active Publication Date: 2021-06-11
MICROTERA SEMICON (GUANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a wafer bonding quality inspection method and system, which is used to solve the problem that the prior art cannot efficiently perform non-destructive inspection on the bonding interface and reveal its defects. The problem of electrical characteristics

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  • Wafer bonding quality detection method and system

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Embodiment 1

[0048] see Figure 1 to Figure 6 , the present embodiment provides a wafer bonding quality detection method, characterized in that, comprising the following steps:

[0049] 1) Provide a first wafer 101 and a second wafer 102, the first wafer 101 includes a stacked first silicon layer 101a and a first bonding metal layer 101b, and the second wafer 102 includes a stacked The second silicon layer 102a and the second bonding metal layer 102b, the first wafer 101 and the second wafer 102 pass through the first bonding metal layer 101b and the second bonding metal layer 102b bond to each other to form the test structure;

[0050] 2) Performing a current-voltage test on the test structure to obtain a current-voltage test curve of the test structure, and characterize the bonding quality of the test structure according to the current-voltage test curve.

[0051] In step 1), see figure 1 The S1 step and figure 2 , providing a first wafer 101 and a second wafer 102, the first wafer ...

Embodiment 2

[0071] like Figure 6 to Figure 7 As shown, this embodiment provides a wafer bonding quality detection system, which is characterized in that it includes:

[0072] A current and voltage test module 106, which is used to perform a current and voltage test on the test structure; the test structure includes a first wafer 101 and a second wafer 102 bonded to each other, and the first wafer 101 includes a stacked first wafer 101 A silicon layer 101a and a first bonding metal layer 101b, the second wafer 102 includes a stacked second silicon layer 102a and a second bonding metal layer 102b, the first wafer 101 and the second The wafer 102 is bonded to each other through the first bonding metal layer 101b and the second bonding metal layer 102b to form the test structure;

[0073] The data collection and judging module 107 obtains the current-voltage test curve of the test structure through the current-voltage test, and characterizes the bonding quality of the test structure accordi...

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Abstract

The invention provides a wafer bonding quality detection method and system. The detection method comprises the following steps of providing a first wafer and a second wafer, wherein the first wafer comprises a first silicon layer and a first bonding metal layer which are stacked, and the second wafer comprises a second silicon layer and a second bonding metal layer which are stacked; binding the first wafer and the second wafer mutually through the first bonding metal layer and the second bonding metal layer to form a test structure; and performing a current and voltage test on the test structure to obtain a current and voltage test curve of the test structure, and representing the bonding quality of the test structure according to the current and voltage test curve. According to the present invention, aiming at the quality evaluation requirement of a low-temperature bonding wafer interface, the current and voltage test is carried out on the test structure, the rapid and lossless characterization of the wafer bonding quality is realized, the electrical characteristics of the bonding interface are disclosed, and the wafer bonding quality detection method and system has important significance for the development of a three-dimensional monolithic integration process.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a wafer bonding quality detection method and system. Background technique [0002] In the past 50 years, "Moore's Law" has been leading the development of integrated circuits. However, the development of "Moore's Law" is approaching the physical limit due to process issues such as lithography limit size, interconnection delay and process fluctuation. In order to further increase the integration level and reduce the interconnection delay, three-dimensional monolithic integration (M3D) has become a new development trend. In the three-dimensional monolithic integration process, the upper-layer devices are manufactured vertically in sequence after the lower-layer devices are manufactured, and the devices of each layer are bonded by wafers through interlayer deposition, and vertically interconnected through holes between monolithic layers. This process c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L21/67G01R31/26
CPCH01L22/14H01L22/34H01L21/67253G01R31/2601G01R31/2603
Inventor 刘森向可强杨超刘筱伟胡云斌
Owner MICROTERA SEMICON (GUANGZHOU) CO LTD