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Three-dimensional memory and manufacturing method thereof

A manufacturing method and memory technology, which is applied in the field of semiconductors and can solve problems such as complex processes

Active Publication Date: 2021-06-18
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Forming the top selection gate tangent requires processes such as photolithography, etching, ashing, stripping, and deposition, and the process is complex

Method used

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  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof

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Embodiment Construction

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings that need to be used in the description of the embodiments. Obviously, the accompanying drawings in the following description are only some examples or embodiments of the present application, and those skilled in the art can also apply the present application to other similar scenarios. Unless otherwise apparent from context or otherwise indicated, like reference numerals in the figures represent like structures or operations.

[0033] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and ...

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Abstract

The invention provides a three-dimensional memory and a manufacturing method thereof. The method comprises the following steps that a semiconductor structure is provided, the semiconductor structure comprises a substrate and a stacking structure located on the substrate, the stacking structure comprises gate layers and insulating layers which are stacked alternately, and the gate layers comprise at least one top selection gate layer located at the top of the stacking structure; a channel hole vertically penetrating through the stacked structure and a groove vertically penetrating through the at least one top selection gate layer are formed; and a memory layer and a channel layer are sequentially formed in the channel hole and the groove on the cross section from outside to inside so as to isolate the at least one top selection gate layer.

Description

technical field [0001] The invention mainly relates to the field of semiconductors, in particular to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] With the continuous improvement of the market's requirements for storage density, the reduction of key dimensions of two-dimensional memory has reached the limit of mass production technology. In order to further increase storage capacity and reduce costs, a three-dimensional structure memory is proposed. [0003] A three-dimensional memory generally includes several storage blocks (Blocks) and several finger storage areas (Fingers) located in the storage blocks (Blocks). The finger storage area and the finger storage area are generally separated by a gate line gap (Gate Line Slit, GLS). Each finger storage area is arranged with multiple rows of channel structures. A top select gate tangent is placed in the middle of each finger bank to divide the top select gate (TSG) of the finger...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11568H01L27/11582H10B43/30H10B43/27
CPCH10B43/30H10B43/27
Inventor 范石根罗来青赵治国骆中伟鲍琨刘思莹
Owner YANGTZE MEMORY TECH CO LTD