Load locking device and substrate transferring method

Abstract

The invention provides a load locking device and a substrate transferring method. A chamber main body comprises a substrate base, a plurality of placement assemblies and a supporting assembly, the supporting end of a first placement piece in a horizontal state is parallel to the top surface of the substrate base, and the supporting end of the first placement piece in a vertical state is perpendicular to the top surface of the substrate base; and the top face of the supporting rod at the initial position is lower than the top face of the substrate base, and the top face of the supporting rod at the first position is higher than the top face of the substrate base and is higher than the supporting end of the first placement piece in the horizontal state. By arranging the placement assemblies capable of being turned over and rotating, the bearing of the two substrates is realized, and the substrate bearing rate of a load misalignment device is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more specifically, to a load lock device and a substrate transfer method. Background technique [0002] In the manufacturing process of semiconductor devices, various vacuum processing chambers are usually used to perform specific treatments such as film deposition, etching, oxidation or nitriding, heat treatment, etc. on the substrate in a vacuum environment, and such vacuum processing chambers are supplied from the outside The transfer of the substrate is usually carried out by including a load lock chamber which switches the internal pressure between an atmospheric pressure state and a vacuum state. [0003] The load lock device is used to transfer substrates such as wafers or glass from a non-vacuum state to a high vacuum state, which requires a certain degree of vacuum, and at the same time, there are also requirements for the number of loads. [0004] However, the load l...

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Problems solved by technology

[0004] However, the load lock device in the prior art only has two layers of station slots, wherein the upper station slot is used for the first vacuum manipulator to take the film, and the lower station slot is used for the vacuum first manipulator to put the film

For high-temperature processes, such as CVD processes, the temperature of the wafer that completes the corresponding process is relatively high, about 750 degrees Celsius. Therefore, after the high-temperature substrate is transferred to the load-lock device, it needs to be cooled before being transferred to the atmosphere. The load-lock device The two-layer work slots are occupied for a long time, resulting in low equipment operation efficiency and restricting the wafer production efficiency

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