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Radio frequency power amplification circuit

A technology for amplifying circuits and radio frequency power, applied in power amplifiers, amplifier protection circuit layout, amplifiers, etc., can solve the problems of transistors being easily broken down, and achieve the effect of enhancing the ESD protection effect

Pending Publication Date: 2021-06-25
RADROCK (SHENZHEN) TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For this reason, the technical problem to be solved by the present invention is to provide a radio frequency power amplifier circuit to effectively realize electrostatic discharge protection and overcome the defect that transistors in the radio frequency power amplifier circuit are easily broken down

Method used

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Embodiment Construction

[0022] Below, the present invention will be described in detail with reference to the accompanying drawings.

[0023] Such as Figures 1 to 6 As shown, this embodiment provides a radio frequency power amplifier circuit, including: a first ESD protection node, a first ground terminal and a second ground terminal, between the first ESD protection node and the first ground terminal A first ESD protection circuit is provided; a second ESD protection circuit is connected between the first ground terminal and the second ground terminal.

[0024] Wherein, the first ESD protection node is a node associated with a port in the radio frequency power amplifier circuit that may be affected by the ESD pulse. The first ESD protection node can be a node connected to the above-mentioned port that may be damaged by the ESD pulse, a node adjacent to the port that may be damaged by the ESD pulse, or a node connected to the above-mentioned port that may be affected by the ESD pulse Nodes on the ...

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PUM

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Abstract

The invention provides a radio frequency power amplification circuit, which comprises a first ESD protection node, a first grounding end and a second grounding end, and is characterized in that a first ESD protection circuit is arranged between the first ESD protection node and the first grounding end; and a second ESD protection circuit is connected between the first grounding end and the second grounding end. According to the radio frequency power amplification circuit, the first ESD protection circuit is arranged between the first ESD protection node and the first grounding end, and the second ESD protection circuit is arranged between the first grounding end and the second grounding end, so that when the ESD protection node has high voltage due to static electricity, a path for discharging the static electricity to the ground can be provided through the first ESD protection circuit; and the second ESD protection circuit can provide a path for discharging static electricity to the ground, so that the static electricity is more effectively discharged, and the ESD protection effect is enhanced.

Description

technical field [0001] The invention relates to the technical field of radio frequency power amplification, in particular to a radio frequency power amplification circuit. Background technique [0002] The RF power amplifier is an essential key component in various wireless communication applications. It is used to amplify the power of the modulated RF signal output by the transceiver to meet the RF signal power requirements required for wireless communication. [0003] However, in the RF power amplifier circuit, the RF power amplifier is easy to be broken down. The reasons are usually: first, the collector is usually connected to the power supply through an inductor, and the resonance of the inductor will generate a higher voltage on the collector terminal of the transistor, thus Cause the RF power amplifier to be broken down. The second is that in the process of using a chip containing a radio frequency power amplifier, a transient high voltage is usually generated on the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/52H03F3/193H03F3/20
CPCH03F1/52H03F3/193H03F3/20
Inventor 赖晓蕾罗文秦华奉靖皓倪建兴
Owner RADROCK (SHENZHEN) TECH CO LTD