Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Driving method of SiC-MOSFET module

A driving method and gate driving circuit technology, applied in the field of traction inverter, can solve the problems such as the need to improve the efficiency of the hierarchical shutdown strategy and the lack of effective use of control chips, and achieve the effect of improving efficiency

Inactive Publication Date: 2021-06-25
TONGHUI ELECTRONICS
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the disadvantage of the above-mentioned patents is that the existing SiC-Mosfet driving method usually adopts a hierarchical shutdown strategy. Mosfet is turned off within the short-circuit tolerance time; due to the lack of effective use of the control chip, the efficiency of the hierarchical turn-off strategy needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Driving method of SiC-MOSFET module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] see figure 1 , the present invention provides a technical solution: a method for driving a SiC-MOSFET module, comprising the following steps:

[0030] Step 1. Detection and sampling. Use voltage detection equipment to detect the real-time voltage at both ends of the resistor, and adjust the gate drive circuit according to the real-time voltage; then compare the real-time voltage V-s with the reference voltage V-ref in sequence, and input the comparison result to In the information sending device;

[0031] Step 2, storage and calculation, use the chip to store the information content containing the comparison result, and then calculate the difference value; according to the calculation result of the difference value, connect the storage module and the calculation module to complete the data exchange;

[0032] Step 3. Complementary judgment. In the case of normal operation of the system, use the detection equipment to carry out complementary judgment on the control signa...

Embodiment 2

[0045] The present invention also provides a technical solution, which is different from the first embodiment: a method for driving a SiC-MOSFET module, including the following steps:

[0046] Step 1. Detection and sampling. Use voltage detection equipment to detect the real-time voltage at both ends of the resistor, and adjust the gate drive circuit according to the real-time voltage; then compare the real-time voltage V-s with the reference voltage V-shut1 in sequence, and input the comparison result to In the information sending device;

[0047] Step 2, storage and calculation, use the chip to store the information content containing the comparison result, and then calculate the difference value; according to the calculation result of the difference value, connect the storage module and the calculation module to complete the data exchange;

[0048] Step 3. Complementary judgment. In the case of normal operation of the system, use the detection equipment to carry out complem...

Embodiment 3

[0061] The present invention also provides a technical solution, which is different from the first embodiment: a method for driving a SiC-MOSFET module, including the following steps:

[0062] Step 1. Detection and sampling. Use voltage detection equipment to detect the real-time voltage at both ends of the resistor, and adjust the gate drive circuit according to the real-time voltage; then compare the real-time voltage V-s with the reference voltage V-shut2 in sequence, and input the comparison result to In the information sending device;

[0063] Step 2, storage and calculation, use the chip to store the information content containing the comparison result, and then calculate the difference value; according to the calculation result of the difference value, connect the storage module and the calculation module to complete the data exchange;

[0064] Step 3. Complementary judgment. In the case of normal operation of the system, use the detection equipment to carry out complem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a SiC-MOSFET module driving method, and the method comprises the following steps: performing detection sampling: using a voltage detection device to detect real-time voltage at two ends of a resistor, and adjusting a gate drive circuit according to the real-time voltage; sequentially comparing the real-time voltage V-s with the reference voltage V-ref, the V-shut1 or the V-shut2, and inputting a comparison result into an information sending device. According to the driving method of the SiC-MOSFET module, seven steps of detection sampling, storage calculation, complementary judgment, time sequence judgment, chip control, fault judgment and pulse generation are set in the driving method, so when an inner tube and an outer tube break down, it can be guaranteed that an SiC-Mosfet can be turned off within short-circuit tolerance time without turning off the outer tube firstly and then turning off the inner tube; By effectively using the control chip, the efficiency of the hierarchical turn-off strategy is improved.

Description

technical field [0001] The invention relates to the technical field of traction inverter, in particular to a driving method of a SiC-MOSFET module. Background technique [0002] As we all know, the traction converter equipment is one of the key components of the train. It is installed at the bottom of the train motor car. Its main function is to convert the electric energy between the DC system and the AC system, and convert the DC power from the catenary into a three-phase AC power through voltage regulation and frequency modulation. The control realizes the starting, braking and speed regulation control of the AC traction motor. [0003] After retrieval, the patent with the publication number CN110365196A published by China Patent Network discloses a three-level integrated SiC-Mosfet drive system, which is designed for driving the I-type three-level inverter using SiC-Mosfet. The system adopts an integrated design, integrating SiC-Mosfet modules, gate drive boards, and co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687
CPCH03K17/687
Inventor 白欣娇崔素杭李帅张策李婷婷袁凤坡曹世鲲敖金平
Owner TONGHUI ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com