Unlock instant, AI-driven research and patent intelligence for your innovation.

Three-terminal controllable memristor analog circuit

An analog circuit and memristor technology, applied in logic circuits, electrical components, pulse technology, etc., can solve the problems of inflexible control, inability to control the working state of the memristor, and inability to easily adjust the performance parameters of the memristor.

Active Publication Date: 2021-06-29
HANGZHOU DIANZI UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the traditional memristor is a two-terminal device with fixed threshold and memristor value. In practical circuit applications, it is not convenient to adjust the performance parameters of the memristor to meet the requirements of circuit design, and it is also impossible to adjust the memristor value. Control the working state of the device, the control is not flexible enough
Although the parameters can be adjusted through the memristor mathematical model during software simulation, it is more difficult in practical application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-terminal controllable memristor analog circuit
  • Three-terminal controllable memristor analog circuit
  • Three-terminal controllable memristor analog circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The examples of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0018] refer to figure 1 , shows the circuit symbol of a three-terminal controllable memristor. figure 2 It is the functional block diagram of the three-terminal controllable memristor analog circuit, including the forward hysteresis control module U 1 , reverse hysteresis control module U 2 , the non-volatile control module U 3 , voltage proportional control module U 4 , the current conversion module U 5 .

[0019] The present invention is based on the general expression of memristor resistance conversion theory:

[0020]

[0021] Memristors have two relatively stable conductance values: G H , G L , corresponding to the low-resistance and high-resistance states of the memristor, respectively. V th1 , V th2 Indicates the threshold voltage of the memristor, when the voltage across the device V X greater than V th1 When , its resistance...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a three-terminal controllable memristor analog circuit which comprises a forward hysteresis control module U1, a reverse hysteresis control module U2, a non-volatile control module U3, a voltage proportion control module U4 and a current conversion module U5. The forward hysteresis control module and the reverse hysteresis control module are connected and are used for generating a bidirectional hysteresis characteristic curve. The non-volatile control module is connected with the voltage proportion control module to realize non-volatile characteristics and resistance conversion characteristics. The output end of the voltage proportion control module is connected with the current conversion module and used for generating voltage in direct proportion to the memristor current. The current conversion module is connected with the voltage proportion control circuit, the forward hysteresis control module and the reverse hysteresis control module, and is used for converting the voltage output by the voltage proportion control module into current so as to ensure that the input port and the output port of the memristor analog circuit have the same current.

Description

technical field [0001] The invention belongs to the technical field of circuit design, and relates to a three-terminal controllable memristor analog circuit, in particular to a hardware simulation with non-volatile characteristics that realizes controllable threshold value / resistance state of the memristor through third-terminal control circuit. Background technique [0002] Memristor is a two-terminal passive circuit element used to characterize the relationship between charge and magnetic flux. It is a new type of non-linear resistor with memory function. changes with changes in voltage. Due to the advantages of low power consumption, high integration density, non-volatile memory characteristics, good switching performance, and small process size, memristors are widely used in large-scale integrated circuits, brain-like neuromorphic computing, and new computing / storage fusion. Architecture computing, artificial intelligence and other directions have great potential resea...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03K19/00
CPCH03K19/00
Inventor 林弥李路平罗文瑶王旭亮陈俊杰韩琪
Owner HANGZHOU DIANZI UNIV