Sapphire crystal growth thermal field structure and growth method thereof

A technology of sapphire crystal and growth method, which is applied in the field of sapphire crystal growth thermal field structure and its growth, can solve the problems of sapphire crystal annealing cracking, large residual stress, etc., achieve the effect of reducing processing cost and process difficulty, and small crystal thermal stress

Pending Publication Date: 2021-07-02
内蒙古晶环电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Through the thermal field structure and crystal growth method of this invention, the problems of annealing cracking and large residual stress of 600kg-700kg super-sized sapphire crystals can be solved, laying the foundation for subsequent processing of high-quality large-sized panels

Method used

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  • Sapphire crystal growth thermal field structure and growth method thereof
  • Sapphire crystal growth thermal field structure and growth method thereof

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Embodiment Construction

[0025] The present invention is described in detail below in conjunction with accompanying drawing and specific embodiment: comprise the crucible that is used to hold crystal, seed crystal rod, heater and the insulation body that is arranged on heater periphery, all are arranged on the side, top and bottom of crucible The heaters are side heaters, top heaters and bottom heaters respectively, and these heaters can control power independently.

[0026] Specifically, such as figure 1 , 2 As shown, the present invention provides a sapphire crystal growth thermal field structure, which mainly includes a sapphire crystal 4 and a crucible 5, and also includes a seed rod 2, a heater, an insulating body 8 and a temperature measuring unit; the crystal 4 is placed on the seed The lower end of the crystal rod is inside the crucible; heaters are arranged on the side, top and bottom of the crucible, which are respectively side heaters, top heaters and bottom heaters. The power of these hea...

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Abstract

The invention discloses a sapphire crystal growth thermal field structure and a growth method thereof, and the sapphire crystal growth thermal field structure comprises a side heater, a top heater and a bottom heater which are respectively arranged on the side, the top and the bottom of a crucible, and the heaters can independently control the power. In-situ annealing in the growth method comprises the following steps: slowly reducing the power of a side heater and a bottom heater respectively, slowly increasing the power of a top heater until the temperature measured by a top temperature measuring unit reaches 1900 DEG C, and reducing by not more than 20 DEG C / hr in the cooling process; keeping the power of the top heater, the side heater and the bottom heater unchanged for 20 hours; reducing the power of the top heater, the power of the side heater and the power of the bottom heater slowly till the temperature measured by the top temperature measuring unit reaches 1000 DEG C, wherein the temperature reduction does not exceed 20 DEG C / hr in the cooling process; keeping the power of the top heater, the side heater and the bottom heater unchanged for 20 hours; reducing the power of the top, side and bottom heaters respectively and slowly to zero, cooling the crystal to normal temperature, wherein the temperature reduction in the cooling process does not exceed 30 DEG C / hr;.

Description

technical field [0001] The invention relates to the field of crystal growth and manufacture, in particular to a sapphire crystal growth thermal field structure and a growth method thereof. Background technique [0002] Sapphire crystal is an important basic material of modern industry. Sapphire has high strength, high hardness, and erosion resistance. It is widely used in infrared window devices, satellite space technology, and high-intensity laser window materials. Its unique lattice structure, excellent mechanical properties, and good thermal properties make sapphire crystals the most ideal for practical semiconductor GaN / Al2O3 light-emitting diodes (LEDs), large-scale integrated circuits SOI and SOS, and superconducting nanostructure films. Substrate material. With the requirement of larger size and lower residual stress on sapphire materials for special optical windows, the development of sapphire crystals over 300kg, especially the ultra-large sapphire crystals of 600k...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): C30B15/14C30B15/20C30B29/20C30B33/02
CPCC30B15/14C30B15/20C30B29/20C30B33/02
Inventor欧阳鹏根张俊曹建伟石刚宋建军付春雷
Owner内蒙古晶环电子材料有限公司