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A low-power reference voltage source suitable for nanoscale cmos process

A reference voltage source and reference voltage technology, applied in the direction of adjusting electrical variables, efficient power electronic conversion, climate sustainability, etc. coefficient, the effect of reducing demand

Active Publication Date: 2022-05-20
广东宝元通检测股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This makes the reference voltage source circuit require a higher operating voltage and is more susceptible to process variation, which in turn increases the temperature coefficient of the circuit

Method used

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  • A low-power reference voltage source suitable for nanoscale cmos process

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Embodiment Construction

[0012] In order to facilitate the understanding of the present invention, the present invention will be described in more detail below in conjunction with the accompanying drawings and specific embodiments. Preferred embodiments of the present invention are given in the description and drawings, but the present invention can be implemented in many different forms and is not limited to the embodiments described in the description. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0013] It should be noted that when a certain element is fixed to another element, it includes directly fixing the element to the other element, or fixing the element to the other element through at least one other element in the middle. When an element is connected to another element, it includes directly connecting the element to the other element, or connecting the element to the other element throu...

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Abstract

The invention provides a low-power reference voltage source suitable for nanoscale CMOS technology, which includes a compensation current generation circuit and a reference voltage generation circuit; through the circuit structure setting, the MOS tubes in the circuit all work in the weak inversion area, The demand of the circuit for the working voltage is reduced, and the low power consumption of the circuit operation is realized. The invention uses the first-order current and second-order current compensation technology to make the gate-source voltage of the MOS transistor working in the weak inversion area in the circuit basically not affected by temperature changes and process deviations, and output it as a reference voltage, effectively The temperature coefficient of the circuit output reference voltage is reduced.

Description

technical field [0001] The invention relates to the design of a reference voltage source circuit system, in particular to the design of a low-power reference voltage source suitable for nanoscale CMOS technology. Background technique [0002] With the application of nano-scale CMOS manufacturing technology in the production of integrated circuits, the integrated scale of integrated circuits has been increasing and the volume has been continuously reduced, but it has also brought many problems in circuit performance. When the reference voltage source circuit is designed and produced under the nano-scale CMOS manufacturing process, the MOS transistor in the circuit usually has a larger conductive channel length, and the leakage current of the MOS transistor increases, and the output impedance decreases. This makes the reference voltage source circuit require a higher operating voltage and is more susceptible to process variations, thereby increasing the temperature coefficient...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/567
CPCG05F1/567Y02B70/10
Inventor 代晶
Owner 广东宝元通检测股份有限公司