A semiconductor graphene nanoribbon and its preparation method and application

A graphene nanobelt and semiconductor technology, applied in graphene, semiconductor devices, nano-carbon, etc., can solve the problems of opening and inability to apply semiconductor devices, etc., and achieve the effect of simple production process route, good uniformity and high product quality

Active Publication Date: 2022-05-17
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the graphene nanoribbon width obtained by this method is about 20 nanometers, and the graphene band gap cannot be opened through the quantum confinement effect in the width direction (the significant quantum confinement effect will only be produced when the width is less than 5 nanometers), that is, the obtained Graphene nanoribbons are still pure conductor materials, not semiconductor materials, so they cannot be used in semiconductor devices

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  • A semiconductor graphene nanoribbon and its preparation method and application
  • A semiconductor graphene nanoribbon and its preparation method and application
  • A semiconductor graphene nanoribbon and its preparation method and application

Examples

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Embodiment 1

[0052] A preparation method of semiconductor graphene nanoribbon, comprising steps as follows:

[0053] (1) Preparation of single-walled carbon nanotube suspension:

[0054] 50 mg of single-walled carbon nanotubes with a diameter of 1.3 nm were annealed in air at 300 ° C for 30 minutes to effectively remove the amorphous carbon mixed therein; then the annealed single-walled carbon nanotubes were added to 50 mL concentrated sulfuric acid with a mass fraction of 98 wt%, and stirred for 2 hours to obtain a suspension of single-walled carbon nanotubes.

[0055] The atomic force microscope photo of the single-walled carbon nanotubes used in this step is as follows: figure 2 shown, from figure 2 As can be seen in , the single-walled carbon nanotubes used have a diameter of 1.3 nm.

[0056] (2) Preparation of single-walled carbon nanotubes with defects:

[0057] 25 mg of potassium permanganate was gradually added to the single-walled carbon nanotube suspension obtained in step ...

Embodiment 2

[0068] A preparation method of semiconductor graphene nanoribbon, comprising steps as follows:

[0069] (1) Preparation of single-walled carbon nanotube suspension:

[0070] 50 mg of single-walled carbon nanotubes with a diameter of 1.3 nm were annealed in air at 300 ° C for 60 minutes to effectively remove the amorphous carbon mixed therein; then the annealed single-walled carbon nanotubes were added to 100 mL concentrated sulfuric acid with a mass fraction of 98 wt%, and stirred for 2 hours to obtain a suspension of single-walled carbon nanotubes.

[0071] (2) Preparation of single-walled carbon nanotubes with defects:

[0072] Gradually add 25 mg of potassium permanganate to the single-walled carbon nanotube suspension obtained in step (1), and react at 45° C. for 60 minutes; after the reaction is completed, pour the resulting reaction solution into 400 mL of ice water, and then The single-walled carbon nanotubes with defects were obtained by filtering with an ethylene fi...

Embodiment 3

[0078] A preparation method of semiconductor graphene nanoribbon, comprising steps as follows:

[0079] (1) Preparation of single-walled carbon nanotube suspension:

[0080] 50 mg of single-walled carbon nanotubes with a diameter of 1.3 nm were annealed in air at 350 ° C for 60 minutes to effectively remove the amorphous carbon mixed therein; then the annealed single-walled carbon nanotubes were added to 100 mL concentrated sulfuric acid with a mass fraction of 98 wt%, and stirred for 2 hours to obtain a suspension of single-walled carbon nanotubes.

[0081] (2) Preparation of single-walled carbon nanotubes with defects:

[0082] Gradually add 25 mg of potassium permanganate to the single-walled carbon nanotube suspension obtained in step (1), and react at 60° C. for 30 minutes; after the reaction is completed, pour the resulting reaction solution into 800 mL of ice water, and then The single-walled carbon nanotubes with defects were obtained by filtering with an ethylene fi...

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Abstract

The invention provides a semiconductor graphene nanobelt and its preparation method and application. The preparation method comprises the steps of annealing the single-walled carbon nanotubes in air, adding them into concentrated sulfuric acid and stirring to obtain the single-walled carbon nanotubes. suspension; potassium permanganate is added to the suspension of single-walled carbon nanotubes to react; after the reaction is completed, the reaction solution is poured into ice water, filtered and dried to obtain defective single-walled carbon nanotubes; the obtained The single-walled carbon nanotubes with defects are added to an aqueous solution of sodium dodecylbenzenesulfonate for ultrasonic treatment, filtered and dried to obtain semiconductor graphene nanobelts, and high-quality semiconductor graphene nanobelts are obtained after high-temperature annealing. The method of the invention has simple process and is easy to prepare on a large scale, and the obtained semiconductor graphene nanobelt has high quality and good uniformity. Field-effect transistors based on the resulting graphene nanoribbons not only yield more than 10 5 The current switch ratio, but also has a photoluminescence effect.

Description

technical field [0001] The invention relates to a semiconductor graphene nanobelt and its preparation method and application, belonging to the technical field of graphene material preparation. Background technique [0002] Graphene has aroused great interest among researchers due to its excellent electrical, thermal and mechanical properties. As conventional electronic devices are getting closer to their size limit, graphene is also considered as a potential replacement or complement to silicon in future electronic science, and thus holds great promise for electronic applications. However, graphene is inherently semi-metallic due to its lack of energy bandgap, thus posing a huge obstacle in its electronic applications. For example, field-effect transistors based on graphene materials are difficult to turn off the current, so the current switching ratio exhibited is often lower than ten, which is several orders of magnitude lower than the expected switching ratio required to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184H01L29/16
CPCC01B32/184H01L29/1606C01B2204/22C01B2204/32
Inventor 宋爱民李虎
Owner SHANDONG UNIV
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