Semiconductor graphene nanobelt as well as preparation method and application thereof

A graphene nanoribbon and semiconductor technology, which is applied in the direction of graphene, semiconductor devices, nano-carbon, etc., can solve the problems of inability to apply semiconductor devices, opening, etc., and achieve the effect of good uniformity, simple manufacturing process route, and uniform bandwidth

Active Publication Date: 2021-07-23
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the graphene nanoribbon width obtained by this method is about 20 nanometers, and the graphene band gap cannot be opened through the quantum confinement effect in the width direction (the significant quantum confinement effect will only be produced when the width is less than 5 nanometers), that is, the obtained Graphene nanoribbons are still pure conductor materials, not semiconductor materials, so they cannot be used in semiconductor devices

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  • Semiconductor graphene nanobelt as well as preparation method and application thereof
  • Semiconductor graphene nanobelt as well as preparation method and application thereof
  • Semiconductor graphene nanobelt as well as preparation method and application thereof

Examples

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Effect test

Embodiment 1

[0052] A preparation method of semiconductor graphene nanoribbon, comprising steps as follows:

[0053] (1) Preparation of single-walled carbon nanotube suspension:

[0054] 50 mg of single-walled carbon nanotubes with a diameter of 1.3 nm were annealed in air at 300 ° C for 30 minutes to effectively remove the amorphous carbon mixed therein; then the annealed single-walled carbon nanotubes were added to 50 mL concentrated sulfuric acid with a mass fraction of 98 wt%, and stirred for 2 hours to obtain a suspension of single-walled carbon nanotubes.

[0055] The atomic force microscope photo of the single-walled carbon nanotubes used in this step is as follows: figure 2 shown, from figure 2 As can be seen in , the single-walled carbon nanotubes used have a diameter of 1.3 nm.

[0056] (2) Preparation of single-walled carbon nanotubes with defects:

[0057] 25 mg of potassium permanganate was gradually added to the single-walled carbon nanotube suspension obtained in step ...

Embodiment 2

[0068] A preparation method of semiconductor graphene nanoribbon, comprising steps as follows:

[0069] (1) Preparation of single-walled carbon nanotube suspension:

[0070] 50 mg of single-walled carbon nanotubes with a diameter of 1.3 nm were annealed in air at 300 ° C for 60 minutes to effectively remove the amorphous carbon mixed therein; then the annealed single-walled carbon nanotubes were added to 100 mL concentrated sulfuric acid with a mass fraction of 98 wt%, and stirred for 2 hours to obtain a suspension of single-walled carbon nanotubes.

[0071] (2) Preparation of single-walled carbon nanotubes with defects:

[0072] Gradually add 25 mg of potassium permanganate to the single-walled carbon nanotube suspension obtained in step (1), and react at 45° C. for 60 minutes; after the reaction is completed, pour the resulting reaction solution into 400 mL of ice water, and then The single-walled carbon nanotubes with defects were obtained by filtering with an ethylene fi...

Embodiment 3

[0078] A preparation method of semiconductor graphene nanoribbon, comprising steps as follows:

[0079] (1) Preparation of single-walled carbon nanotube suspension:

[0080] 50 mg of single-walled carbon nanotubes with a diameter of 1.3 nm were annealed in air at 350 ° C for 60 minutes to effectively remove the amorphous carbon mixed therein; then the annealed single-walled carbon nanotubes were added to 100 mL concentrated sulfuric acid with a mass fraction of 98 wt%, and stirred for 2 hours to obtain a suspension of single-walled carbon nanotubes.

[0081] (2) Preparation of single-walled carbon nanotubes with defects:

[0082] Gradually add 25 mg of potassium permanganate to the single-walled carbon nanotube suspension obtained in step (1), and react at 60° C. for 30 minutes; after the reaction is completed, pour the resulting reaction solution into 800 mL of ice water, and then The single-walled carbon nanotubes with defects were obtained by filtering with an ethylene fi...

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Abstract

The invention provides a semiconductor graphene nanobelt and a preparation method and application thereof, and the preparation method comprises the following steps: carrying out annealing treatment on single-walled carbon nanotubes in air, then adding the single-walled carbon nanotubes into concentrated sulfuric acid, and stirring to obtain a single-walled carbon nanotube suspension; adding potassium permanganate into the single-walled carbon nanotube suspension for reaction; after the reaction is completed, pouring reaction liquid into ice water, filtering and drying to obtain the single-walled carbon nanotube with defects; adding the obtained single-walled carbon nanotube with defects into a sodium dodecyl benzene sulfonate aqueous solution for ultrasonic treatment, filtering and drying to obtain a semiconductor graphene nanobelt, and annealing at high temperature to obtain the high-quality semiconductor graphene nanobelt. The method disclosed by the invention is simple in process and easy for large-scale preparation, and the obtained semiconductor graphene nanobelt is high in quality and good in uniformity. The field effect transistor based on the obtained graphene nanobelt not only obtains a current on-off ratio of more than 105, but also has a photoluminescence effect.

Description

technical field [0001] The invention relates to a semiconductor graphene nanobelt and its preparation method and application, belonging to the technical field of graphene material preparation. Background technique [0002] Graphene has aroused great interest among researchers due to its excellent electrical, thermal and mechanical properties. As conventional electronic devices are getting closer to their size limit, graphene is also considered as a potential replacement or complement to silicon in future electronic science, and thus holds great promise for electronic applications. However, graphene is inherently semi-metallic due to its lack of energy bandgap, thus posing a huge obstacle in its electronic applications. For example, field-effect transistors based on graphene materials are difficult to turn off the current, so the current switching ratio exhibited is often lower than ten, which is several orders of magnitude lower than the expected switching ratio required to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184H01L29/16
CPCC01B32/184H01L29/1606C01B2204/22C01B2204/32
Inventor 宋爱民李虎
Owner SHANDONG UNIV
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