31results about How to "Has semiconducting properties" patented technology

The invention relates to an antistatic polyester film and a preparation method thereof, wherein the antistatic polyester film comprises a polyester film and an antistatic coating layer coated on the surface of the polyester film; the antistatic coating layer is composed of hybrid acrylate resin, an antistatic agent, a curing agent and a solvent; the antistatic coating layer is composed of the components in parts by weight: 30-50 parts of hybrid acrylate resin, 0.5-1 part of a leveling agent, 0.2-2.0 part of the curing agent, and 90-120 parts of the solvent. According to the invention, polythiophene conductive macromolecules are added in the polymerization process, the synergistic effect of polythiophene and modified nano inorganic particles is utilized to improve the antistatic property, and the used modified nano inorganic particles have good rigidity and hardness, are copolymerized with other acrylate monomers after being modified by a silane coupling agent and are uniformly distributed in acrylate resin. According to the hybrid acrylate resin prepared by the preparation method disclosed by the invention, coating is performed after compounding, so that the antistatic coating layer coated on the surface of the polyester film has scratch resistance, meanwhile, the antistatic performance of the film is also improved, and electrostatic adsorption of impurities can be effectivelyprevented.

The invention relates to a lead-free high-Curie temperature PTCR (positive temperature coefficient resistor) ceramic material and a preparation method thereof. The composition of the ceramic material is of Ba1-x (Bi0.5Na0.5)xTiO3, wherein x is not less than 0 and not more than 0.06. A sol-gel method is adopted for preparing the lead-free PTCR material and the method, the sintering temperature of a traditional solid-phase reaction method is too high, when the temperature is above 1300 DEG C, BNT (Bi0.5Na0.5TiO3) is very easy to decompose during the sintering process, and the material is further difficult to be semi-conducted; and by adopting the sol-gel method according to the invention, the sintering can be performed at the temperature of 1250 DEG C, and the sintering temperature is reduced. When the BNT content is more than 2mol%, the sintering and the semi-conduction can not be performed in an air atmosphere by using the traditional solid-phase reaction method, and the sintering needs to be performed under a reducing atmosphere. However, when the BNT content is 5mol%, the material still has the properties of a semi-conductor by using the method disclosed by the invention, and the Curie temperature is obviously increased.

A process for preparing WO3 nanocrystals from tungsten halide by HF plasma CVD method includes the oxidizing reaction in HF plasma jet, and sudden cooling.

The invention relates to the field of preparation of (Cu,Fe)3O4 spinel coatings, in particular to a method for preparing a (Cu,Fe)3O4 spinel coating through a magnetron sputtering method and an application thereof. The method includes the following specific preparation steps that (1) pretreatment and pre-oxidation treatment are carried out; (2) sputtering deposition is carried out to obtain an alloy coating; and (3) thermal inversion is carried out to obtain the spinel coating. The method has the characteristics that the operation process is simple and the deposition speed is high, and the prepared spinel coating is compact, has good binding force with a substrate, has excellent long-time resistance to high temperature oxidation and conductivity, and can effectively suppress external diffusion of substrate Cr.

The invention discloses a preparation method of a silicon-based surface-enhanced Raman substrate. Monocrystalline silicon acquires an ordered pyramid structure through a surface micro-structure preparation method, and the ordered pyramid is coated with a gold film. The preparation method comprises the steps that (1) the ordered pyramid structure on the surface of the monocrystalline silicon is obtained through corrosion of an alkaline solution; and (2) the surface of the monocrystalline silicon of the ordered pyramid structure is coated with the gold film with a certain thickness through an ion sputtering coating method. Composite nano particles obtained by the method have good chemical stability, substances with the concentration as low as 10-70 mol/L can be detected, and the absorption spectrogram obtained after long-time preservation hardly changes. The preparation method is easy and convenient to implement, low in cost, good in repeatability and capable of easily controlling the pyramid dimension and the thickness of the gold film.

The invention discloses an active biology carrier material. The material comprises following components in percentage by weight: 85 to 95% of polypropylene, 0.1 to 10% of germanium powder and 5 to 15% of carbon powder. The components mentioned above are subjected to a modification process to be made into even micelles for injection moulding, and then the micelles are injection moulded into the biology carriers for water processing through a mould. The active biology carrier material is beneficial to form a firm biology membrane, increases biology capacity of unit volume, increases dissolving sources of the water body and improves the biology active ability.

The invention discloses a method for preparing diamond based on graphite under low pressure, which combines theoretical calculation and experimental research of a first principle, and realizes conversion from graphite to diamond under low pressure by depositing transition metal on the surface of graphite; the method has the advantages of being mild in condition, low in cost, low in equipment requirement, simple in process and easy to operate, the obtained transition metal terminated diamond has the semiconductor property, and a new material is provided for application of diamond electronic devices.

The invention relates to the technical field of woodenware seal primers, and particularly discloses a water-based seal white primer. The white primer is characterized in that the white primer containsthe following components in parts by weight: 30-50 parts of water-based polyurethane resin; 30-40 parts of water-based hydroxyl-terminated silicone resin; 15-30 parts of titanium dioxide; 45-60 partsof water-based silicon resin; 1-5 parts of silica powder; 1-10 parts of transparent powder; 1-10 parts of zinc powder; 3-10 parts of ethylene glycol monobutyl ether; 5-13 parts of deionized water; and 5-13 parts of absolute ethyl alcohol. Water-based polyurethane resin and water-based hydroxyl-terminated silicon resin permeate into wood and are crosslinked and cured to form a compact paint film tightly combined with the wood, so that pores of the wood are sealed and blocked, the crosslinking density is further improved through the water-based silicon resin, the sealing effect is improved, andsilicon micro-powder, transparent powder and zinc powder are combined, so the white filling and sealing material with good fluidity, high strength and high whiteness is formed; the use amount of subsequent white primer is effectively reduced while the filling and sealing effect is ensured, and the sealing treatment process is simplified.

The invention provides a negative electrode material for a secondary battery, a preparation method of the negative electrode material, a negative electrode plate and the secondary battery. The negative electrode material comprises a nanocube framework and layered vanadium disulfide growing on the surface of the nanocube framework, a precursor of the nanocube framework is a zeolite imidazole metal organic framework. Compared with the prior art, the negative electrode material provided by the invention adopts the nanocube as a supporting framework and the zeolite imidazole metal organic framework as a precursor, so that the negative electrode material has relatively good stability in structure and can provide stable support for an overall layered three-dimensional structure; lamellar vanadium disulfide is grown on the surface of the nanocube framework, the lamellar vanadium disulfide is formed by S-V-S connection, the interlayer distance is large, electrons can be transmitted in a planar network formed by V-V bonds, and the electron transfer efficiency is improved. And the problem that the deintercalation of alkali metal with larger ion radius cannot be realized due to smaller interlayer spacing of the existing graphite negative electrode material can be effectively solved.

The invention discloses a method for preparing nanometer titanium dioxide microcrystalline by utilizing solid state feeding manner, belongs to the technical field of chemical technology and novel material synthesis, and relates to a production technology for preparing the nanometer titanium dioxide microcrystalline by adopting a high-frequency plasma vapor deposition method. The method disclosed by the invention comprises the following steps: adopting solid state titanium dioxide powder as a basic material, completing decomposition and an oxidation reaction under an oxygen-rich high-frequency plasma state jet flow atmosphere, and carrying out shock cooling to obtain the nanometer titanium dioxide microcrystalline with an average grain diameter range of 20-50 nm. Compared with the other methods, the microcrystalline prepared by the method is high in purity and approximately spherical; the particle size of the microcrystalline can be controlled; the method is short in technological process, and continuous in operation, and facilitates industrial production.

The invention relates to a flexible substrate and a preparation method thereof. The flexible substrate comprises a substrate and a coating layer stacked on the substrate, wherein the coating layer comprises a first graphene layer, a first ITO layer, a second graphene layer and a second ITO layer which are stacked in sequence, and the first graphene layer is stacked on the substrate. The adhesion between the substrate and the coating layer in the flexible substrate is good, it is not prone to cracking, and the bending property of the flexible substrate is good.

The invention provides a semiconductor graphene nanobelt and a preparation method and application thereof, and the preparation method comprises the following steps: carrying out annealing treatment on single-walled carbon nanotubes in air, then adding the single-walled carbon nanotubes into concentrated sulfuric acid, and stirring to obtain a single-walled carbon nanotube suspension; adding potassium permanganate into the single-walled carbon nanotube suspension for reaction; after the reaction is completed, pouring reaction liquid into ice water, filtering and drying to obtain the single-walled carbon nanotube with defects; adding the obtained single-walled carbon nanotube with defects into a sodium dodecyl benzene sulfonate aqueous solution for ultrasonic treatment, filtering and drying to obtain a semiconductor graphene nanobelt, and annealing at high temperature to obtain the high-quality semiconductor graphene nanobelt. The method disclosed by the invention is simple in process and easy for large-scale preparation, and the obtained semiconductor graphene nanobelt is high in quality and good in uniformity. The field effect transistor based on the obtained graphene nanobelt not only obtains a current on-off ratio of more than 105, but also has a photoluminescence effect.