31results about How to "Has semiconducting properties" patented technology

The invention provides a semiconductor graphene nanobelt and its preparation method and application. The preparation method comprises the steps of annealing the single-walled carbon nanotubes in air, adding them into concentrated sulfuric acid and stirring to obtain the single-walled carbon nanotubes. suspension; potassium permanganate is added to the suspension of single-walled carbon nanotubes to react; after the reaction is completed, the reaction solution is poured into ice water, filtered and dried to obtain defective single-walled carbon nanotubes; the obtained The single-walled carbon nanotubes with defects are added to an aqueous solution of sodium dodecylbenzenesulfonate for ultrasonic treatment, filtered and dried to obtain semiconductor graphene nanobelts, and high-quality semiconductor graphene nanobelts are obtained after high-temperature annealing. The method of the invention has simple process and is easy to prepare on a large scale, and the obtained semiconductor graphene nanobelt has high quality and good uniformity. Field-effect transistors based on the resulting graphene nanoribbons not only yield more than 10 5 The current switch ratio, but also has a photoluminescence effect.

A bidirectional protection lubricating wear-resistant coupling comprises a lubricating wear-resistant agent layer formed by coating lubricating wear-resistant agent on the surface of a sucker-rod coupling through the surface reinforcing treatment process. The thickness of the lubricating wear-resistant agent layer is less than 0.5mm. Defects conventionally existing in the prior art that hardness is low, strength is low, wear resistance is low, corrosion resistance is low, scratch resistance is low, heat resistance is low, friction coefficient is high, self-lubrication and oxidation resistance cannot be completed, impact resistance is low, high temperature stability is poor, and service life is short are avoided effectively.

The present invention discloses a modified silica gel material, a preparation method and applications thereof. The modified silica gel material comprises the following components, by weight, 60-90% of a silica gel main material, 1-5% of germanium powder, 2-10% of titanium powder, 2-10% of negative ion powder, 2-10% of bamboo carbon, and 2-10% of far infrared ray powder. The method comprises: (a) preparing raw materials: mixing the raw materials according to the weight ratio, completely and uniformly stirring, and carrying out pressure reduction bubble removing; and (2) carrying out mold pressing or mold injection: placing or injecting the prepared raw materials into a preset mold, heating to a temperature of 180-300 DEG C, and discharging from the mold to obtain the modified silica gel material, wherein a heating time is 200-600 s. The modified silica gel material is used in health care products, has a good biological effect, a good chemical effect and a good physical effect, and can provide effects of body fatigue elimination and air purification.

The present invention provides a wire and cable teflon semiconductor thin film which is prepared from 92-98 wt % of polytetrafluoroethylene and 2-8 wt % of carbon black by the following method: taking the polytetrafluoroethylene and the carbon black, mixing evenly; pressing for moulding; sintering at high temperature; mechanically processing for film-forming, rolling and orientating. By optimum composition ratio, choosing of appropriate particle size, and use of a certain way for mixing, the problem of ununiform mixing and dispersing of the carbon black in the polytetrafluoroethylene powder can be solved, the product is high in quality, and good in effect, has good semiconductor characteristics and good flame retardant, can be used for wire and cable for balancing electric field and playing the effect of flame retardance, solves the defects of the worse fire retardant performance of PE and TPE wires and cables, is more competitive in price than imported product, is ultra-thin in thickness, fills the domestic blank, and breaks the common situation that black-filled teflon films on market in the prior art are basically used in other fields in which functional requirements are not high.