Method for modifying properties of graphene

Abstract

A method for modifying properties of graphene includes a graphene film provision step and a modification step. In the graphene film provision step, a graphene film is provided, and the graphene is formed on a substrate. In the modification step, the graphene film is placed in a vacuum environment and radiated by an electron beam to obtain a graphene material.

Description

technical field [0001] The invention relates to a graphene characteristic adjustment method, in particular to a graphene characteristic adjustment method for changing graphene semiconductor characteristics. Background technique [0002] Graphene is a flat film with a hexagonal lattice. It is a two-dimensional material with a thickness of only one carbon atom (about 0.34 nm). Graphene not only has high mechanical strength, thermal conductivity, and high carrier transfer rate. Characteristics, through the adjustment of semiconductor characteristics, can be used to develop thinner electronic components or transistors with faster conduction speed. [0003] Existing semiconductor characteristic adjustment methods can be divided into thermal diffusion method and ion implantation method. Among them, the existing thermal diffusion method uses high temperature (≧500°C) to drive the atoms to be doped to diffuse in the semiconductor film and the substrate (combined with the semiconduc...

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Problems solved by technology

Among them, the existing thermal diffusion method uses high temperature (≧500°C) to drive the atoms to be doped to diffuse in the semiconductor film and the substrate (combined with the semiconductor film); however, the existing thermal diffusion method must be Carried out in a high temperature environment, it is easy to cause damage to the semiconductor thin film structure

However, the existing ion implantation method uses high voltage to cause ionized elements to collide and then physically replace them; however, although the existing ion implantation method avoids high-temperature environments, the ionized elements collide with each other. , causing great damage to the semiconductor thin film structure, so it needs to be repaired by annealing

[0004] Although the above-mentioned existing semiconductor characteristic adjustment methods can adjust the structural characteristics of the semiconductor thin film, the thickness of graphene is only about 0.34 nm. Severe damage, so it is not suitable for these semiconductor characteristic adjustment methods

[0005] In addition, the above-mentioned existing semiconductor characteristic adjustment methods need to place the entire semiconductor thin film in a high-temperature or high-voltage environment, and it is difficult to adjust the characteristics of a small-area graphene thin film.

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