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System and method for designing a photomask

A photomask and mask technology, applied in the photomask used in the process, the photomask system, and the field of designing photomasks, can solve the problems of difficult design pattern transfer, etc.

Pending Publication Date: 2021-07-23
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as process nodes continue to shrink (e.g., from 90nm in 2003 to 7nm in 2018), it becomes increasingly difficult to convert a design into a pattern with a photomask that will produce the same pattern size and profile as the designer intended. Pattern Transfer to Substrate

Method used

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  • System and method for designing a photomask
  • System and method for designing a photomask
  • System and method for designing a photomask

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Embodiment Construction

[0022] While specific configurations and arrangements are discussed, it should be understood that this is done for illustration purposes only. As such, other configurations and arrangements may be used without departing from the scope of the present disclosure. Moreover, the present disclosure can also be used in a variety of other applications. Functional and structural features as described in the present disclosure may be combined, adjusted and modified with each other in ways not specifically depicted in the drawings, so that these combinations, adjusted and modified are within the scope of the present disclosure.

[0023] In general, a term can be understood at least in part by its usage in context. For example, as used herein, the term "one or more" may be used in the singular to describe any feature, structure or characteristic or may be used in the plural to describe a combination of features, structures or characteristics, depending at least in part on the context. ...

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Abstract

A system and method for designing a photomask are disclosed. In an example, a design pattern is provided. A virtual photomask having a simulated pattern corresponding to the design pattern is created by the at least one processor. The simulation pattern is optimized to polymerize a final pattern to be generated on the semiconductor substrate with the design pattern. The optimization further includes correcting, by the at least one processor, the one or more contours of the simulated pattern such that a geometric difference between the final pattern and the design pattern meets a predetermined criterion. The correction is based at least in part on a model trained from a plurality of training samples.

Description

Background technique [0001] The present disclosure relates to systems and methods for designing photomasks, and more particularly, systems and methods for designing photomasks used in the process of fabricating semiconductor chips. [0002] The process of making semiconductor chips involves multiple steps using highly complex devices and techniques, one of which is photolithography. Photolithography allows the transfer of design patterns onto semiconductor substrates, creating circuit designs and transistor layouts on the substrate. However, as process nodes continue to shrink (e.g., from 90nm in 2003 to 7nm in 2018), it becomes increasingly difficult to convert a design into a pattern with a photomask that will produce the same pattern size and profile as the designer intended. The pattern is transferred to the substrate. Contents of the invention [0003] Systems and methods for designing photomasks are disclosed herein. [0004] In one example, a method for designing a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36G06F30/392G06F30/398
CPCG03F1/36G06F30/392G06F30/398
Inventor 董明张雷
Owner YANGTZE MEMORY TECH CO LTD
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