Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for pulling cylindrical crystal from melt

A melt and crystal technology, applied in the direction of self-melt pulling method, crystal growth, chemical instruments and methods, etc., can solve the problem that the crystal uniformity will not be optimal

Pending Publication Date: 2021-08-24
PVA TEPLA
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Since the regulation of the crystal diameter is carried out according to the prior art by means of adjustment of the crystal pulling speed, and the crystal pulling speed is thereby subjected to a continuous change, the homogeneity of the crystal being pulled will not be optimal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for pulling cylindrical crystal from melt
  • Method for pulling cylindrical crystal from melt
  • Method for pulling cylindrical crystal from melt

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] first reference figure 1 . according to figure 1 , the crystal pulling plant consists of a plant housing 1 in which there is a crucible 3 filled with a melt 2 . A crucible heater 4 is located around the crucible, by means of which the material in the crucible 3 is melted and then maintained at temperature.

[0035]A cylindrical crystal 5 is slowly drawn out of the melt 2 by means of the crystal lifter 6 , wherein atoms of the melt 2 settle on the lower side of the crystal 5 and form a lattice when the crystal is drawn out of the melt 2 . Here, the material in the crucible 3 is consumed, so that the crystal pulling plant is usually provided with a crucible lifter 7 with which the crucible 3 is tracked so that the melt surface is always at a constant level relative to the plant housing 1 .

[0036] The crystal diameter is detected by means of a camera 8 which is pointed towards the edge of the crystal during the transition to the melt. The crystal diameter can be dedu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

According to a method for controlling the diameter of a crystal (5), a constant crystal pulling speed (13) is maintained and in order to control the diameter, heat radiation onto the lower outer surface of the crystal (5) is influenced by varying the height of an annular gap (12) between a heat shield (10) surrounding the crystal (5) and the surface of the melt. This does not only influence the crystal diameter, but also results in a vertical temperature gradient that remains constant across the diameter of the crystal, thereby increasing the homogeneity of the crystal (5).

Description

technical field [0001] The present invention relates to a method for pulling cylindrical crystals from a melt by means of a crystal pulling facility having: a crucible, in which a melt is present; a crucible heater, which surrounds the crucible in an annular manner; Crucible lifter for tall crucibles; crystal lifter for drawing crystals from a melt and heat shield annularly surrounding the crystal, the lower edge of the heat shield being above the melt forming an annular gap Finish. Background technique [0002] In crystal growth according to the Czochralski method, a crystal is drawn from a hot melt, wherein the atoms of the melt are arranged on the lower side of the crystal in a lattice structure typical for melt materials, so that the crystal grows from When the melt is slowly pulled out (where the crystals cool), a rigid crystal lattice is created. In the layers of the crystal near the melt there are firstly also inherent point defects, i.e. vacancies, i.e. unoccupied ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/14C30B15/20C30B15/30C30B29/06
CPCC30B29/06C30B15/14C30B15/203C30B15/30
Inventor A·米厄
Owner PVA TEPLA