Preparation method of bismuth-based silica material and its application in trapping radioactive iodine
A silicon dioxide and bismuth-based technology, applied in radioactive purification, chemical instruments and methods, silicon compounds, etc., can solve the problems of complex operation, high cost, and poor iodine adsorption capacity, and achieve simple operation, low cost, and high-efficiency synthesis Effect
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Embodiment 1～3
[0027] A preparation method of bismuth-based silicon dioxide material, comprising the following steps:
[0028] Step 1, bismuth nitrate is dissolved in 100mL nitric acid solution (1M) to obtain bismuth nitrate solution;
[0029] Step 2, adding nano-SiO to the bismuth nitrate solution 2 , stirred for 30min to obtain solution I;
[0030] Step 3, dissolving tin protochloride in sodium hydroxide solution to obtain solution II;
[0031] Step 4: Mix solution I and solution II, stir for 5 minutes, wash and filter to obtain a solid;
[0032] Step five, the solid obtained in step four is sintered at 400° C. for 6 h under an argon-hydrogen reducing protective atmosphere to obtain a bismuth-based silicon dioxide material (Bi-SiO 2 );Such as figure 1 As shown, comparing the XRD patterns before and after doping with Bi, it can be seen that the characteristic diffraction peak intensity of Bi increases with the increase of Bi content. This result shows adopting the method of the present...
Embodiment 4
[0034] A preparation method of bismuth-based silicon dioxide material, comprising the following steps:
[0035] Step 1, bismuth nitrate is dissolved in 100mL nitric acid solution (1M) to obtain bismuth nitrate solution;
[0036] Step 2, adding nano-SiO to the bismuth nitrate solution 2 , stirred for 30min to obtain solution I;
[0037] Step 3, dissolving tin protochloride in sodium hydroxide solution to obtain solution II;
[0038] Step 4. Mix solution I and solution II, stir for 5 minutes, and while stirring, use an infrared lamp to intermittently irradiate the mixed reaction solution of solution I and solution II, wash and filter to obtain a solid; the infrared lamp The power is 275W; the distance between the infrared lamp and the mixed reaction solution is 5cm; the intermittent irradiation is irradiated for 1min, and the irradiation is stopped for 30s, so as to circulate;
[0039] Step five, the solid obtained in step four is sintered at 400° C. for 6 hours under an argo...
Embodiment 5
[0041] A preparation method of bismuth-based silicon dioxide material, comprising the following steps:
[0042] Step 1, bismuth nitrate is dissolved in 100mL nitric acid solution (1M) to obtain bismuth nitrate solution;
[0043] Step 2, adding nano-SiO to the bismuth nitrate solution 2 , stirred for 30min to obtain solution I;
[0044] Step 3, dissolving tin protochloride in sodium hydroxide solution to obtain solution II;
[0045] Step 4: Mix solution I and solution II, stir for 5 minutes, wash and filter to obtain a solid;
[0046] Step 5. Sinter the solid obtained in step 4 at 400°C for 6 hours under an argon-hydrogen reducing protective atmosphere to obtain a bismuth-based silica material; reprocess the bismuth-based silica material. The process is: bismuth-based silica The silicon material is placed in a low-temperature plasma processor, and gas is introduced into the low-temperature plasma processor to form a plasma and treat the bismuth-based silicon dioxide material...
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