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Micro-electro-mechanical microphone structure

A micro-electromechanical microphone and dielectric layer technology, which is applied in the direction of microelectronic microstructure devices, microstructure technology, microstructure devices, etc., can solve the problems of uneven mechanical strength of dielectric materials, unstable etching process, etc.

Pending Publication Date: 2021-09-10
SOLID STATE SYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The mechanical strength of the dielectric material may not be uniform during the etch process, which may cause the etch process to be unstable

Method used

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  • Micro-electro-mechanical microphone structure
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  • Micro-electro-mechanical microphone structure

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Experimental program
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Embodiment Construction

[0030] The present invention relates to a structure of a micro-electro-mechanical (MEMS) microphone and a method of manufacturing the same. The backplane layer of the MEMS microphone has uniform acoustic holes. Uniform acoustic holes allow the dielectric layer beneath the backplane layer to be etched under more uniform conditions. The mechanical strength of the dielectric layer may have better uniformity during release of the separator.

[0031] A number of embodiments are provided for description, but the invention is not limited to the number of embodiments. In addition, combinations can be made between the embodiments.

[0032] Micro-electromechanical microphone diaphragms are thin and flexible to sense acoustic signals. During the manufacturing process, the diaphragm is embedded in the dielectric layer. The dielectric material is relatively thicker on the side below the backplane layer. The path to etch the dielectric material below the backplane layer is substantiall...

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Abstract

The invention discloses a micro-electro-mechanical microphone structure and a manufacturing method thereof. The micro-electro-mechanical microphone structure includes a substrate having a first opening. A dielectric layer is disposed on the substrate, wherein the dielectric layer has a second opening aligned with the first opening. A diaphragm is disposed within the second opening of the dielectric layer, wherein a peripheral region of the diaphragm is embedded in the dielectric layer at a sidewall of the second opening. The backboard layer is arranged on the dielectric layer and covers the second opening. The backboard layer comprises a plurality of sound holes arranged in a regular array pattern, the regular array pattern comprises a pattern unit, the pattern unit comprises one of the sound holes as a central hole, and the distances between peripheral holes of the sound holes surrounding the central hole and the central hole are the same.

Description

technical field [0001] The present invention relates to a microelectromechanical microphone, and in particular to a structure and a manufacturing method of the microelectromechanical microphone. Background technique [0002] The microphone is designed based on semiconductor manufacturing technology to reduce size. Microelectromechanical microphones are components used in electronic devices to sense sound signals, such as voice for communication. [0003] The function of the MEMS microphone to sense the sound signal is based on the diaphragm, which vibrates corresponding to the frequency and amplitude of the sound signal in response to the air pressure change from the sound signal, and at the same time converts the sound signal into an electrical signal for use in peripheral electronic devices. [0004] During the manufacturing process, the diaphragm of the MEMS microphone is embedded in a dielectric layer before being released, and a backplate layer with acoustic holes is f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00B81C1/00H04R9/08H04R31/00
CPCB81B7/00B81C1/00349B81C1/00523B81C1/00555H04R9/08H04R31/00H04R2201/003B81B2201/0257B81C2201/013H04R31/003H04R19/005H04R19/04H04R7/04B81B3/0021B81C1/00158B81C1/00166H04R7/18B81B2203/0353B81B2203/0127B81B2203/04
Inventor 蔡振维谢聪敏李建兴
Owner SOLID STATE SYST