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Photodetector for imaging applications

A photodetector and imaging technology, applied in the field of photodetectors, can solve problems such as reducing the performance of photodetectors

Pending Publication Date: 2021-10-29
KONINKLJIJKE PHILIPS NV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unlike their crystalline counterparts, photodetectors with amorphous materials suffer from charge trapping in defect sites at the material level, which degrades photodetector performance

Method used

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  • Photodetector for imaging applications
  • Photodetector for imaging applications
  • Photodetector for imaging applications

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0041] figure 1 A schematic top view of a photodetector according to an embodiment is shown. The photodetector 100 includes a photodiode array 100 a having a plurality of photodiodes 110 . Each photodiode 110 is specifically a photosensitive area 111 and a periphery 112 at the photolithographically defined edges of the photodiode 110 . Between adjacent photodiodes 110 of the photodiode array 100a there is a space 120 .

[0042] In order to reduce or suppress trapping of charges in the photodiode 110, a charge trap suppression unit is provided. The charge trapping suppression unit can be implemented as a (metal) bias line 132 directly at the edge 112 of each photodiode 110 . The (metal) bias lines 132 of the individual photodiodes 110 are interconnected via connection lines 131 and connected to a voltage source via line 133 so that the metal bias lines 132 can be biased as desired.

[0043] Thus, the photodetector 100 includes a plurality of photodiodes 110 that are spaced ...

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PUM

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Abstract

A photodetector (100) for medical imaging applications, in particular computer tomography applications, is provided. The photodetector (100) comprises a photodiode array (100a) having a plurality of photodiodes (110). Each has a bulk sensitive area (111) comprising amorphous state material and a periphery (112) at photo-lithographically defined edges (112) of the photodiode (110). The photodetector (100) furthermore comprises metal bias lines (132) directly at the periphery (112) of the bulk sensitive area (111) of the photodiode (110). A charge trapping suppressing unit (130, 140) configured to suppress a trapping of charges at the edges (112) of the photodiodes is provided.

Description

technical field [0001] The present invention relates to a photodetector for imaging applications and a method of manufacturing a photodetector for imaging applications. Background technique [0002] In medical imaging applications like computed tomography applications, photodetectors are required to detect incident photons. To reduce the cost of detectors for image acquisition applications, photodetectors with photodiodes based on amorphous materials have been proposed. However, trap sites for charge carriers are created in amorphous materials due to defects along the thickness of the bulk layer and impurities present during deposition. Unlike their crystalline counterparts, photodetectors with amorphous materials suffer from charge trapping in defect sites at the material level, which degrades the performance of the photodetector. [0003] US 2005 / 0111612 A1 discloses a computed tomography detector with an optical mask layer to reduce crosstalk artifacts. [0004] US 201...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14632H01L27/14623H01L27/14658H01L27/14692H01L27/14687H01L27/14607H01L27/14685
Inventor A·库马尔
Owner KONINKLJIJKE PHILIPS NV