A kind of method for growing indium phosphide single crystal by vgf method

Abstract

The invention belongs to the field of preparation of indium phosphide single crystals, and specifically discloses a method for growing indium phosphide single crystals by VGF method. processing; heating up the molten material, setting the heating target value in the heating control program for heating and pressurizing; for the growth of the molten seed, setting the growth temperature, and when the melting length of the seed crystal reaches 10-15mm, the position of the crucible begins to drop when the shoulder grows. The descending speed is not more than 2.5mm / h, and the pot position will automatically stop falling after the growth; cooling annealing, after the growth is completed, it will automatically enter the cooling annealing, the temperature in the furnace will be evacuated after the temperature drops to 350 ℃, and the temperature in the furnace will be reduced to about 150 ℃ Then the furnace door is opened to obtain single crystals. The invention increases the pulling speed method, so that the thermal field of the indium phosphide single crystal during the growth process is more uniform, the vertical orientation crystallization is more stable, and more indium phosphide single crystals are grown. The crystal pass rate is higher.

Description

technical field [0001] The invention belongs to the field of preparation of indium phosphide single crystals, in particular to a method for growing indium phosphide single crystals by VGF method. Background technique [0002] Indium phosphide single crystal is an important second-generation compound III-V semiconductor crystal after germanium crystal and gallium arsenide crystal. It is mainly used in the fields of optoelectronic technology, microwave technology and space satellite communication. The preparation process of high-quality indium phosphide single crystal materials has higher requirements and is more difficult. Because indium phosphide single crystal whiskers can only be prepared under high temperature and high pressure, and the stacking fault energy of indium phosphide is low, it is easy to generate twin crystals, so it is difficult to prepare large-sized and high-quality indium phosphide single crystals. The growth methods of indium phosphide single crystal mai...

AI Technical Summary

Problems solved by technology

However, the pass rate of indium phosphide single crystal obtained by traditional VGF growth is low, and the diameter is mainly 2" and a small amount of 3", which is difficult to meet the needs of the application market.

Although the indium phosphide single crystal grown by LEC has a high crystallization rate, it is affected by high dislocations, uneven distribution of carrier concentration and electron mobility, which indirectly affects the application life and cost of high-power microwave devices.

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