Multi-nozzle LPCVD film forming method
A film-forming method and multi-nozzle technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of long reaction cycle, poor operation stability, and poor uniformity of wafer film formation, etc. Poor film uniformity, good running stability and short reaction cycle
Pending Publication Date: 2021-12-10
杭州中欣晶圆半导体股份有限公司
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Problems solved by technology
[0004] The present invention mainly solves the shortcomings of poor operation stability and long reaction cycle in the prior art, and provides a multi-nozzle LPCVD film forming method, which has the characteristics of single process order, good operation stability and short reaction cycle
Solved the problem of poor film formation uniformity on the top of the furnace tube
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[0027] Example: such as figure 1 Shown, a kind of multi-nozzle LPCVD film forming method comprises the following steps:
[0028] The first step: First, the semiconductor wafer semi-finished product is loaded, and then sent into the reaction chamber to complete the vacuuming operation of the reaction chamber.
[0029] Step 2: In the reaction chamber, 5 nozzles are uniformly arranged in a ring, including 4 SiH4 nozzles and 1 N2 nozzle. Check the condition of the equipment, and after confirming that it is normal, fill the reaction chamber with N2 to purge through the N2 nozzle and raise the temperature to 650°C.
[0030] The third step: vacuumize the reaction chamber again, and then keep the pressure stable, open all SiH4 nozzles and N2 nozzles, and start the deposition and film formation process. The pressure inside the core tube of the deposition film forming furnace is controlled at 20Pa. During film formation, the flow rate of 4 SiH4 nozzles is 0.2SLM, and the flow rate of...
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The invention relates to a multi-nozzle LPCVD film forming method, which belongs to the technical field of semiconductor wafer processing and comprises the following operation steps of: S1, firstly, loading a semi-finished semiconductor wafer, then feeding the semi-finished semiconductor wafer into a reaction chamber, and completing the vacuumizing operation of the reaction chamber; S2, checking the condition of equipment, after confirming that the condition is normal, filling N2 into the reaction chamber through N2 nozzles for purging, and warming to the temperature of 650 plus and minus 40 DEG C; S3, then vacuumizing the reaction chamber, then after keeping the pressure stable, opening all SiH4 nozzles and N2 nozzles, and starting a deposition film forming process; S4, after the deposition film forming process is completed, closing all of the SiH4 nozzles and the N2 nozzles, and then vacuumizing the reaction chamber. and S5, backflushing the N2 by the N2 nozzles to recover the pressue of the reaction chamber to the normal pressure, and finally, completing the semiconductor wafer film forming process. The multi-nozzle LPCVD film forming method has the characteristics of simple process, good operation stability and short reaction period. The problem of poor film forming uniformity of wafers at the top of a furnace core tube is solved.
Description
technical field [0001] The invention relates to the technical field of semiconductor wafer processing, in particular to a multi-nozzle LPCVD film forming method. Background technique [0002] In the production and processing of semiconductor wafers, LPCVD is one of the common Poly-Si film formation technologies at present. Its basic principle is to use SiH4 to decompose at high temperature to generate a Poly-Si film deposited on the wafer surface. SiH4 enters the furnace core tube from the external special gas pipeline through the nozzle. [0003] The existing nozzle is made of quartz material and is in the shape of a round tube. During the production process, it was found that the longest nozzle among the SiH4 nozzles is easy to break, and its service life is shorter than other nozzles. Some nozzles even break during the normal production process, causing a whole batch of products to be scrapped due to abnormal film thickness. Contents of the invention [0004] The inv...
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IPC IPC(8): C23C16/455C23C16/52
CPCC23C16/45563C23C16/52
Inventor 戚定定
Owner 杭州中欣晶圆半导体股份有限公司