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Single-mode hybrid iii-v on silicon laser of simplified construction

A III-V, silicon photonics technology, used in lasers, laser parts, semiconductor lasers, etc., can solve problems such as complex control

Pending Publication Date: 2021-12-10
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For DFB lasers, the fabrication of such gratings requires high-resolution lithography, so controlling them is still relatively complex

Method used

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  • Single-mode hybrid iii-v on silicon laser of simplified construction
  • Single-mode hybrid iii-v on silicon laser of simplified construction
  • Single-mode hybrid iii-v on silicon laser of simplified construction

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Embodiment Construction

[0048] refer to Figure 4 to Figure 7 , the present invention relates to a laser device comprising a III-V heterostructured amplifying medium, for example formed by a stack QW of quantum wells sandwiched between an N-type doped InP layer 1 and a P-type doped InP layer 2 . Under this amplifying medium, the laser comprises a silicon optical waveguide, for example a slab waveguide 3 , which may be covered, in particular locally, by a ridge 4 .

[0049] Such as Figure 5 As shown, the slab waveguide 3 can be formed on the surface layer of a silicon-based insulator substrate, thus passing through a buried insulating layer 7 (usually made of SiO 2 made) is separated from the silicon substrate 6. The waveguide is also covered with an insulating layer 8 (usually made of SiO 2 made), which in particular enables the incorporation of amplifying media. Such as Figure 4 , Image 6 with Figure 7 As shown in the transverse section BB of , the slab waveguide 3 may be partially covere...

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Abstract

The invention relates to a laser device comprising: - a III-V heterostructure amplifying medium (1, QW, 2); - a silicon optical waveguide (3, 4), which comprises a coupling section (71) facing a central portion of the amplifying medium, a propagation section (74) and a first transition section (72) between the coupling section (71) and the propagation section (74); - a first and a second reflective structure (Mf, Mr) allowing a Fabry-Perot type resonant cavity to be formed between them for the amplifying medium. The coupling section (71) comprises a refractive index disruption region (71) provided with micro-reflectors designed to reduce the thickness and / or the width of the coupling section. The first reflective structure (Mf) is formed in a section of the waveguide with a first thickness. The second reflective structure (Mr) is formed in a section of the waveguide (75), which has the first thickness and which is separated from the coupling section (71) by a second transition section (73) of the waveguide, the second transition section (73) having a second thickness that is greater than the first thickness.

Description

technical field [0001] The field of the invention is that of integrated photonic components, which use the properties of semiconductor materials capable of emitting light and the properties of semiconductor materials conventionally used in integrated circuits. [0002] The invention more particularly relates to silicon-based hybrid lasers comprising III-V heterostructure amplifying media. Background technique [0003] Silicon-based III-V hybrid lasers typically include: [0004] - a gain structure comprising at least one group III-V heterostructure light amplifying medium capable of emitting light and arranged to cover a section of a silicon waveguide to form a hybrid waveguide section therewith, [0005] - an optical feedback structure for forming a resonant cavity for the amplifying medium, and [0006] - Optical transitions between hybrid waveguide segments and other silicon waveguide segments, in particular light propagation segments for laser emissions. [0007] The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/02H01S5/0225H01S5/026H01S5/10H01S5/12H01S5/125H01S5/14H01S5/20H01S5/0239
CPCH01S5/021H01S5/2031H01S5/1032H01S5/141H01S5/12H01S5/125H01S5/026H01S5/1014H01S5/0239
Inventor S·梅内佐J·潘T·蒂森
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES