Semiconductor module comprising a semiconductor body electrically contected to a shaped metal body, as well as the method of obtaining the same
A semiconductor and metal body technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc.
Pending Publication Date: 2021-12-17
DANFOSS SILICON POWER
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Problems solved by technology
However, this approach poses challenges for tolerances transverse to the plane of the semiconductor chip and for tension on the chip due to the large adhesion surface
Method used
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Embodiment Construction
[0049] figure 1 is a perspective detail view of a particularly preferred embodiment of a semiconductor module according to the invention.
[0050]The semiconductor module 100 includes a semiconductor 10 arranged on a substrate 20 . A shaped metal body 30 forming a contact surface for the electrical conductor 40 is arranged on the upper face of the semiconductor 10 . In the example shown, the shaped metal body 30 is electrically conductively connected to the semiconductor 10 over the entire surface via a connection layer 50 , in particular a sinter layer. Semiconductor 10 and shaped metal body 30 can be connected in a conventional manner by sintering.
[0051] Alternatively, conductive nanowires may be used to connect the semiconductor 10 and the shaped metal body 30 . The nanowires are grown from the surface or surfaces to be joined and then bond the surfaces together. The bonding is performed under compression and possibly at elevated temperature. However, this technique...
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A semiconductor module comprising a semiconductor and comprising a shaped metal body (30) that is electrically contacted by the semiconductor (10), for forming a contact surface for an electrical conductor (40), wherein the shaped metal body (30) is bent or folded. A method is also described for establishing electrical contacting of an electrical conductor (40) on a semiconductor body (10), said method comprising the steps of: fastening a bent or folded shaped metal body (30) of a constant thickness to the semiconductor body (10) by means of a first fastening method and then fastening the electrical conductor (40) to the shaped metal body (30) by means of a second fastening method.
Description
technical field [0001] The invention relates to a semiconductor module comprising a semiconductor and comprising a shaped metal body in electrical contact with the semiconductor for forming a contact surface for an electrical conductor. Background technique [0002] Conventional assembly methods for power modules are based on soldering the collector / drain side of the chip to the substrate, while the corresponding emitter / source potentials of the upper face of the chip are connected to the substrate by aluminum wire connections. These methods have been found to be reliable in standard applications using silicon-based semiconductors. [0003] Over the years, the power density of chips has increased, and thus the thermomechanical requirements of the assembly method have also increased. Therefore, other assembly methods have been established for new high power density silicon semiconductor technologies. Silver sintering or diffusion brazing has been developed for the lower fac...
Claims
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Login to View More IPC IPC(8): H01L23/492H01L23/49H01L23/495H01L21/60H01L21/607H01L29/16
CPCH01L23/492H01L23/4924H01L23/49H01L23/495H01L24/89H01L29/1608H01L2224/89H01L2224/48472H01L2224/48091H01L2924/10272H01L2224/45124H01L2224/45147H01L2924/13091H01L2224/45014H01L2224/48491H01L2224/33181H01L2224/32225H01L2224/0603H01L2224/83365H01L2224/83385H01L2224/83801H01L2224/8384H01L2224/83224H01L2224/83205H01L2224/84345H01L2224/84365H01L2224/84205H01L2224/84214H01L2224/4099H01L2224/321H01L2224/73215H01L2224/73213H01L24/32H01L24/40H01L24/83H01L24/84H01L2224/29111H01L2924/00014H01L24/06H01L24/48H01L24/73H01L2224/2612H01L2924/0103H01L2924/01048H01L2924/01013H01L2224/45099H01L2224/05599H01L2924/00015H01L2224/73221H01L24/37H01L24/85H01L2224/32058H01L2224/32059H01L2224/32245H01L2224/37124H01L2224/37147H01L2224/4001H01L2224/4007H01L2224/40091H01L2224/40095H01L2224/40245H01L2224/48011H01L2224/48245H01L2224/8382H01L2224/84207H01L2224/85203H01L2224/8582H01L2224/8584H01L2924/30107
Inventor 安德烈·巴斯托斯阿比贝弗兰克·奥斯特瓦尔德亚采克·鲁茨基马丁·贝克尔罗纳德·艾泽勒戴维·本宁
Owner DANFOSS SILICON POWER