Chemical vapor deposition device

A chemical vapor deposition and flow guiding device technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of low exhaust efficiency, blocked exhaust ports, uneven gas distribution, etc. The effect of improving yield, increasing deposition efficiency, and reducing risk of exhaust port clogging

Active Publication Date: 2021-12-21
SUZHOU SICREAT NANOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the embodiment of the present application is that the gas distribution in the deposition furnace is uneven, and the solid by-products generated during the reaction are easy to adhere to the exhaust port, resulting in low exhaust efficiency or blocking the exhaust port.

Method used

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  • Chemical vapor deposition device
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Embodiment Construction

[0030] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the application. However, the present application can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0031] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is said to be "connected" to another element, it can...

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Abstract

The invention discloses a chemical vapor deposition device. The device comprises a furnace body, an air inlet, an air outlet and a flow guide device. The flow guide device comprises at least one flow guide plate, and each flow guide plate is provided with one or more through holes. When the number of the flow guide plates is two or more, the orthographic projections of the center points of the through holes in the two adjacent flow guide plates on the same projection plane are not overlapped. The interior of the furnace body is divided into a first area and a second area by a plane where the flow guide plate on the uppermost layer of the flow guide device is located, the air inlet is communicated with the outside and the first area in the furnace body, the air outlet is communicated with the outside and the second area in the furnace body, and the flow guide device is arranged in the second area.

Description

technical field [0001] The present application relates to the technical field of vapor deposition, in particular to a chemical vapor deposition device with a flow guiding device. Background technique [0002] As one of the widely used technologies in the semiconductor industry, chemical vapor deposition (Chemical VaporDeposition, CVD) is to enter the gas containing raw material components (also called precursor) into the high-temperature deposition furnace, and deposit it on the surface through diffusion and convection mechanisms. The process of depositing a solid film on a preform and producing a finished product. [0003] In the existing high-temperature deposition furnace, the precursor is introduced into the reaction chamber, and after decomposing and reacting on the surface of the substrate material, it is pumped away at the gas outlet through an external vacuum pump, thereby ensuring that the reaction by-products are drawn out of the chamber, and the new precursor int...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45591
Inventor 不公告发明人
Owner SUZHOU SICREAT NANOTECH CO LTD
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