Semiconductor device, capacitor device and manufacturing method of capacitor device

Abstract

The invention provides a semiconductor device, a capacitor device and a manufacturing method of the capacitor device, and relates to the technical field of semiconductors. The manufacturing method comprises the following steps: forming a plurality of storage node contact plugs distributed in an array and an insulating layer for separating the storage node contact plugs on a substrate; forming an electrode supporting structure on the side, away from the substrate, of the insulating layer, wherein the electrode supporting structure is provided with a plurality of through holes exposing the storage node contact plugs respectively; each through hole comprises a plurality of hole sections which are in butt joint in sequence, and the hole diameter of the hole section, close to the side of the substrate, of the hole sections is larger than that of the hole section, away from the side of the substrate, of the hole sections; forming a first electrode layer in each through hole, wherein the first electrode layer is in contact connection with the storage node contact plugs; forming dielectric layers on the outer surface and the inner surface of a structure jointly formed by the first electrode layer and the electrode supporting structure; and forming a second electrode layer on the outer surface of the dielectric layer. According to the manufacturing method of the capacitor device, short circuit can be avoided, and the capacitance is improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular, to a semiconductor device, a capacitor device, and a method for manufacturing the capacitor device. Background technique [0002] As one of the necessary components in integrated circuits, capacitors have the functions of accommodating charge, adjusting voltage and filtering in the circuit. With the continuous reduction of the size of semiconductor devices, in order to ensure sufficient capacitance, it is usually necessary to increase the height of the electrodes, so that the aspect ratio of the electrodes increases. However, during the manufacturing process, due to the influence of the manufacturing process, the top of the electrode is prone to deformation, so that the electrodes of adjacent capacitors are in contact and short-circuited. [0003] It should be noted that the information disclosed in the above background section is only for enhancing the underst...

AI Technical Summary

Problems solved by technology

However, during the manufacturing process, due to the influence of the manufacturing process, the top of the electrode is prone to deformation, so that the electrodes of adjacent capacitors are in contact and short-circuited.

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