Solid-state imaging element and method for manufacturing solid-state imaging element
An imaging element and solid-state technology, which is applied in the manufacturing field of back-illuminated solid-state imaging elements and solid-state imaging elements, and can solve problems such as area reduction and difficulty in ensuring the area occupied by capacitors
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no. 1 example
[0049]
[0050] For example, the solid-state imaging element according to the first embodiment is a back-illuminated solid-state imaging element.
[0051] Such as Figure 1 to Figure 4 As shown, the solid-state imaging device has a semiconductor substrate including a first semiconductor substrate 101 and a second semiconductor substrate 102 .
[0052] The first semiconductor substrate 101 is a substrate provided with a pixel circuit including a photodiode 110 and a floating diffusion 111 .
[0053] The second semiconductor substrate 102 is stacked on the surface of the first semiconductor substrate 101 opposite to the photodiode 110 side ( Figure 4 on the upper surface of the substrate). Notice, figure 2 The second semiconductor substrate 102NP of adjacent pixels is shown.
[0054] The fifth electrode 163 is formed on the surface of the second semiconductor substrate 102 opposite to the surface facing the first semiconductor substrate 101 ( Figure 4 on the upper surf...
no. 2 example
[0132] The solid-state imaging element according to the second embodiment is different from the first embodiment in that Figure 11 The configuration of capacitor 120 is shown as well as the configuration of the equivalent circuit. In the following description, descriptions of the same parts as the corresponding parts in the first embodiment are omitted in some cases.
[0133] The capacitor 120 includes a first capacitor part 121 and a second capacitor part 122 .
[0134] The first capacitor part 121 is a capacitor formed in a first capacitor region previously defined in the first semiconductor substrate 101 .
[0135] A first capacitor region is defined at a location including the floating diffusion 111 in the first semiconductor substrate 101 .
[0136] The first capacitor portion 121 has a first electrode 131 , a first dielectric film 141 and a second electrode 151 .
[0137] The first dielectric film 141 is formed in a portion included in the first electrode 131 and overl...
no. 3 example
[0142] Such as Figure 12 As shown, the solid-state imaging element according to the third embodiment is different from the first embodiment in the configuration of the first semiconductor substrate 101 and the configuration of the capacitor 120 . In the following description, descriptions of the same parts as the corresponding parts in the first embodiment are omitted in some cases.
[0143] The first semiconductor substrate 101 includes a surface ( Figure 12 The loading electrode 170 on the upper surface in the middle).
[0144] For example, the loading electrode 170 is formed by using a polysilicon film, for example.
[0145] The capacitor 120 has a PD-side electrode 130 , a dielectric film 140 and an opposite PD-side electrode 150 .
[0146] The PD-side electrode 130 includes a third electrode 132 .
[0147] The third electrode 132 is one end ( Figure 12 middle and lower end) a columnar electrode connected to the loading electrode 170 .
[0148] The dielectric film...
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