Microelectronic devices with lower recessed conductive structures and related methods and systems

Abstract

The invention relates to microelectronic devices with lower recessed conductive structures and related methods and systems. Microelectronic devices include a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. Conductive contact structures extend through the stack structure. An insulative material is between the conductive contact structures and the tiers of the stack structure. In a lower tier portion of the stack structure, a conductive structure, of the conductive structures, has a portion extending a first width between a pair of the conductive contact structures. In a portion of the stack structure above the lower tier portion, an additional conductive structure, of the conductive structures, has an additional portion extending a second width between the pair of the conductive contact structures. The second width is greater than the first width. Related methods and electronic systems are also disclosed.

Description

[0001] priority claim [0002] This application claims U.S. Patent Application Serial No. 16 / 922,792, "Microelectronic Devices With Lower Recessed Conductive Structures and Related Methods and Systems," filed July 7, 2020 priority. technical field [0003] Embodiments of the present disclosure relate to the field of microelectronic device design and fabrication. More particularly, the present disclosure relates to methods for forming microelectronic devices (e.g., memory devices such as 3D NAND memory devices) having a layered stack structure comprising vertically alternating conductive and insulating structures, to related systems, and to Methods for forming such structures and devices. Background technique [0004] Memory devices provide data storage for electronic systems. Flash memory devices are one of various types of memory devices and have many uses in modern computers and other electronic devices. A conventional flash memory device may include a memory array ha...

AI Technical Summary

Problems solved by technology

Challenges in maintaining structural integrity of insulating materials during removal of sacrificial materials and replacement of conductive materials

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