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Microelectronic devices with lower recessed conductive structures and related methods and systems

A technology of microelectronic devices and conductive structures, used in circuits, electrical components, semiconductor devices, etc.

Pending Publication Date: 2022-01-07
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Challenges in maintaining structural integrity of insulating materials during removal of sacrificial materials and replacement of conductive materials

Method used

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  • Microelectronic devices with lower recessed conductive structures and related methods and systems
  • Microelectronic devices with lower recessed conductive structures and related methods and systems
  • Microelectronic devices with lower recessed conductive structures and related methods and systems

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0115] Embodiment 1: A microelectronic device comprising: a stack structure comprising a vertically alternating sequence of insulating structures and conductive structures arranged in layers; a conductive contact structure extending through the stack structure; and the conductive contact structure and an insulating material between the layers of the stack structure; in the lower portion of the stack structure, one of the plurality of conductive structures has a first width extending between a pair of the conductive contact structures portion; in a portion of the stack structure above the lower layer portion, another conductive structure of the plurality of conductive structures has another portion extending a second width between the pair of conductive contact structures, the first The second width is greater than the first width.

Embodiment 2

[0116] Embodiment 2: The microelectronic device of Embodiment 1, wherein the conductive contact structures taper in width from a widest width at the top of the stack structure to a width at or below the stack structure bottom. The narrowest width.

Embodiment 3

[0117] Embodiment 3: The microelectronic device of any one of embodiments 1 and 2, wherein: the insulating material tapers in width across the portion above the underlying portion of the stack; And the insulating material in the lower portion extends laterally to define an insulating extension vertically adjacent an end of the insulating structure of the lower portion.

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Abstract

The invention relates to microelectronic devices with lower recessed conductive structures and related methods and systems. Microelectronic devices include a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. Conductive contact structures extend through the stack structure. An insulative material is between the conductive contact structures and the tiers of the stack structure. In a lower tier portion of the stack structure, a conductive structure, of the conductive structures, has a portion extending a first width between a pair of the conductive contact structures. In a portion of the stack structure above the lower tier portion, an additional conductive structure, of the conductive structures, has an additional portion extending a second width between the pair of the conductive contact structures. The second width is greater than the first width. Related methods and electronic systems are also disclosed.

Description

[0001] priority claim [0002] This application claims U.S. Patent Application Serial No. 16 / 922,792, "Microelectronic Devices With Lower Recessed Conductive Structures and Related Methods and Systems," filed July 7, 2020 priority. technical field [0003] Embodiments of the present disclosure relate to the field of microelectronic device design and fabrication. More particularly, the present disclosure relates to methods for forming microelectronic devices (e.g., memory devices such as 3D NAND memory devices) having a layered stack structure comprising vertically alternating conductive and insulating structures, to related systems, and to Methods for forming such structures and devices. Background technique [0004] Memory devices provide data storage for electronic systems. Flash memory devices are one of various types of memory devices and have many uses in modern computers and other electronic devices. A conventional flash memory device may include a memory array ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11524H01L27/11556H01L27/1157H01L27/11582H10B43/27H10B41/10H10B41/27H10B41/35H10B43/10H10B43/35
CPCH10B41/35H10B41/27H10B43/35H10B43/27H10B41/10H10B43/10
Inventor A·查杜鲁I·V·恰雷
Owner MICRON TECH INC
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