Bulk acoustic wave resonator assembly with acoustic decoupling layer, manufacturing method, filter and electronic equipment

Abstract

The present invention relates to a bulk acoustic wave resonator assembly comprising a substrate; at least two resonators which are bulk acoustic wave resonators and are overlapped on one side of the substrate in the thickness direction of the substrate, wherein the at least two resonators comprise a first resonator and a second resonator, the second resonator is arranged above the first resonator, the first resonator is provided with a first top electrode, a first piezoelectric layer, a first bottom electrode and a first acoustic mirror, the second resonator is provided with a second top electrode, a second piezoelectric layer, a second bottom electrode and a second acoustic mirror, and an acoustic decoupling layer in a cavity form is arranged between the first top electrode and the second bottom electrode; the acoustic decoupling layer is used as the second acoustic mirror; and at least one electrode is provided with an acoustic boundary structure along the boundary of the effective area of the corresponding resonator. The invention further relates to a manufacturing method of the bulk acoustic wave resonator assembly, a filter and electronic equipment.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator component and a manufacturing method thereof, a filter with the resonator component, and an electronic device. Background technique [0002] With the rapid development of today's wireless communication technology, the application of miniaturized portable terminal equipment is becoming more and more extensive, so the demand for high-performance, small-sized RF front-end modules and devices is also increasingly urgent. In recent years, filter devices such as filters and duplexers based on, for example, Film Bulk Acoustic Resonators (FBAR) are becoming more and more popular in the market. On the one hand, it is due to its excellent electrical properties such as low insertion loss, steep transition characteristics, high selectivity, high power capacity, and strong anti-electrostatic discharge (ESD) capability; on the other hand, i...

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Problems solved by technology

[0004] In addition, in the existing design, bulk acoustic wave resonators are combined in series and parallel to form a filter. Multiple resonators need to be formed on one substrate. Each resonator is separated at different horizontal positions of the substrate and connected by horizontal metal leads, such as figure 1 As shown in the dotted box, the top electrode 104 of the resonator 100 is connected to the bottom electrode 102 of the resonator 200 through the conductive via v. The connection width of the electrode 104, the width of the conductive via v, the width of the top electrode 104 of the resonator 100, and the width of the bottom electrode 102 of the resonator 200 all have certain requirements. Generally, the total length is > 5 μm, which leads to the introduction of relatively large connecting lines. Large electrical loss, especially for high-frequency resonators, when the electrode thickness is <1000A, the insertion loss will deteriorate by more than 0.1dB

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