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Memory selector

A selector and memory technology, applied to the composition of a given selector, the field of resistive memory and its selector, can solve the problems affecting the density of storage arrays, etc.

Pending Publication Date: 2022-02-18
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, this affects the density of the storage array

Method used

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Embodiment Construction

[0038] In the various figures, similar features are designated by similar reference numerals. In particular, common structural and / or functional features in various embodiments may have the same reference numerals and may have the same structural, dimensional and material properties.

[0039] For purposes of clarity, only operations and elements that are useful for understanding the embodiments described herein have been detailed and described. In particular, a storage point may comprise elements not described, such as electrical connections.

[0040] Unless otherwise stated, when referring to two elements connected together, this means a direct connection without any intervening elements other than conductors, and when referring to two elements coupled together, this means that Two elements may be connected, or may be coupled via one or more other elements.

[0041] In the following disclosure, unless otherwise stated, when referring to absolute position qualifiers, such as...

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PUM

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Abstract

The present description relates to a selector (33) for a memory cell (3), which selector is intended to switch from a resistive state to a conducting state so as to respectively prevent or allow access to the memory cell, characterized in that it consists of an alloy consisting of germanium, selenium, arsenic and tellurium.

Description

[0001] This patent application claims priority from French patent application FR 19 / 04900 which should be considered forming part of the present disclosure. technical field [0002] The present disclosure relates generally to electronic devices and, more particularly, to resistive memories and selectors thereof. More specifically, this disclosure applies to the composition of a given selector. Background technique [0003] Resistive random access memories integrated in arrays of the "1T1R" type are known. These arrays consist of structures containing a transistor and a resistor cell. In this structure, transistors are used as selectors. This selector makes it possible to access resistive memory cells for a read or write or erase or program operation (program = write and erase) in a given memory cell while limiting unwanted leakage current. [0004] Selectors currently used in memory arrays have a large size compared to selectors of resistance cells. Therefore, this affe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10B63/24H10B63/80H10N70/20H10N70/882H10N70/826H10B63/84H10N70/8828H10N70/026H10N70/8825
Inventor 安东尼·韦尔迪吉尔伯特·萨西内加布里埃尔·莫拉斯加布里埃莱·纳瓦罗
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES