Semiconductor device

Abstract

A semiconductor device of the present invention comprises: a dielectric fin comprising a cap layer; a gate structure on the first portion of the cap layer and extending in a direction; and a dielectric layer adjacent to the gate structure and on the second portion of the cap layer. The width of the first part in the direction is larger than that of the second part in the direction.

Description

technical field [0001] Embodiments of the present invention relate to dielectric fins and methods of forming the same to avoid gate shorting to source / drain of multi-bridge pass transistors. Background technique [0002] The semiconductor integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits having smaller and more complex circuits than the previous generation. In the evolution of integrated circuits, functional density (the number of interconnected devices per unit chip area) generally increases as the geometric size (eg, the smallest component or circuit that can be produced by the manufacturing process used) shrinks. A shrinking process is often beneficial for increased throughput and lower associated costs. Shrinking dimensions also increase the complexity of handling and manufacturing integrated circuits. [0003] For example, as integra...

AI Technical Summary

Problems solved by technology

While existing dielectric fins are generally adequate for their intended purpose, they do not meet all requirements

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