Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate, forming a first semiconductor layer and a second semiconductor layer which are located in different regions of the substrate on the surface of the substrate, and enabling the first semiconductor layer and the second semiconductor layer to be made of different materials; the first semiconductor layer and the second semiconductor layer are patterned, the first semiconductor layer remaining on the substrate serves as a first fin part, the second semiconductor layer remaining on the substrate serves as a second fin part, and the wall thickness of the first fin part is larger than that of the second fin part; forming a protection layer covering the second fin part; and after the protection layer covering the second fin part is formed, removing part of the side wall of the first fin part, so that the difference between the wall thickness of the first fin part after the part of the side wall is removed and the wall thickness of the second fin part is smaller than or equal to a first preset value. According to the method, the electrical performance of the semiconductor structure is improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] In semiconductor manufacturing, with the development trend of ultra-large-scale integrated circuits, the feature size of integrated circuits continues to decrease. In order to adapt to smaller feature sizes, the channel length of transistors is also continuously shortened. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the ability of the gate structure to control the channel becomes worse, and the gate voltage pinches off the channel. The difficulty of the channel is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur. [0003] Therefore, in o...

AI Technical Summary

Problems solved by technology

[0004] However, the performance of devices formed by existing semiconductor processes is not good

Images