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Storage device for performing read operations using time-interleaved sampled page buffers

A page buffer and read operation technology, applied in the direction of read-only memory, information storage, static memory, etc., can solve problems such as inappropriate

Pending Publication Date: 2022-03-18
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such techniques are not suitable when the threshold voltage distribution of memory cells is shifted

Method used

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  • Storage device for performing read operations using time-interleaved sampled page buffers
  • Storage device for performing read operations using time-interleaved sampled page buffers
  • Storage device for performing read operations using time-interleaved sampled page buffers

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Embodiment Construction

[0027] figure 1 is a conceptual block diagram of a system according to an exemplary embodiment of the present inventive concept.

[0028] refer to figure 1 , system 100 may be a data center including dozens of hosts or servers running hundreds of virtual machines. According to some embodiments, the system 100 may be, for example, a computing device such as a laptop computer, a desktop computer, a server computer, a workstation, a portable communication terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a smartphone , tablet, virtual machine or virtual computing device for virtual machines. Alternatively, system 100 may be part of a component included in a computing system such as a graphics card.

[0029] System 100 may include the following reference figure 1 The hardware components are described in detail, but one or more embodiments of the inventive concept are not limited thereto. System 100 may include other components. In an embodimen...

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Abstract

A storage device that performs a read operation by using a time-interleaved sampled page buffer is provided. The memory device controls a sensing time point at which a bit line of an even page buffer circuit is sensed and a sensing time point at which a bit line of an odd page buffer circuit is sensed with a specific time difference, and performs a parity sensing (EOS) operation in the order of even sensing and odd sensing. The storage device performs a two-step EOS operation, and performs a main sensing operation on a selected storage unit according to a result of the two-step EOS operation.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to Korean Patent Application No. 10-2020-0120310 filed with the Korean Intellectual Property Office on September 18, 2020, the entire disclosure of which is hereby incorporated by reference. technical field [0003] The inventive concept relates to a semiconductor memory device, and more particularly, to a memory device performing a read operation using a time-interleaved sampling page buffer and an operating method of the same. Background technique [0004] Many companies and their computer systems host data processing systems such as data centers. Data centers are used to distribute hosted applications and / or transactions and include networked computer resources (eg, servers, disks, and virtual machines). In such a configuration, the enterprise is the customer of the data center. Data centers provide customers with many services that can reduce costs and ease management burdens. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/10G11C7/12G11C5/14G11C29/42
CPCG11C7/1057G11C7/1069G11C7/12G11C5/147G11C5/148G11C29/42G11C16/26G11C11/5642G11C2211/5642G11C16/349G11C16/24G11C16/0483G11C16/08G11C16/10G11C5/143G06F11/1068G11C11/5671H01L24/08H01L25/0657H01L25/18H01L2224/08145H01L2924/1431H01L2924/14511
Inventor 金志秀金炯坤朴商秀张俊锡金珉奭
Owner SAMSUNG ELECTRONICS CO LTD