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A Method of Voltage Distribution Analysis Based on Read Data

A voltage distribution and analysis method technology, applied in read-only memory, information storage, static memory, etc., can solve the problems of not knowing the original data of the data disk and the difficulty of NAND analysis methods, so as to reduce the number of times to read data and improve efficiency effect

Active Publication Date: 2022-05-27
杭州阿姆科技有限公司
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the development process of SSD solid state drive, when locating the problem disk, in most cases, it is not known what the original data in the current data disk is.
In this case, if you want to analyze whether the state of a certain physical block is normal through the voltage distribution curve, it is obviously difficult to meet this requirement using the existing NAND analysis method

Method used

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  • A Method of Voltage Distribution Analysis Based on Read Data
  • A Method of Voltage Distribution Analysis Based on Read Data
  • A Method of Voltage Distribution Analysis Based on Read Data

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Embodiment Construction

[0052] In order to facilitate those skilled in the art to better understand the present invention, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. The following are only exemplary and do not limit the protection scope of the present invention.

[0053] The invention discloses a voltage distribution analysis method based on read data, which does not limit the type of NAND Flash used. No matter SLC, MLC, TLC or QLC, it also does not require different data sample sizes to be collected. It can be a The data of one or more WLs (Word Lines) can also be the data of one or more physical blocks. As long as the method described in this embodiment is used, a corresponding voltage distribution analysis diagram can be drawn.

[0054] The voltage distribution analysis method based on read data described in this embodiment is applied to NAND Flash, such as figure 1 shown, including at least the steps:

[0...

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Abstract

The invention discloses a voltage distribution analysis method based on read data, which is applied to NAND Flash, including: determining the range of the voltage to be measured according to a known standard voltage distribution diagram; determining several voltages to be measured within the range of the voltage to be measured Voltage gear, the voltage gear to be tested refers to the gear of the voltage threshold point used when reading the original data in the NAND Flash; bind all the voltage threshold points together to adjust the gear, read the original data in the NAND Flash and save it; Calculate the relative number of storage states determined by each voltage level to be measured corresponding to each voltage threshold point, expressed by CountX(i); pre-draw the voltage distribution diagram, based on the pre-drawn voltage distribution diagram for CountX ( i) Perform processing to obtain the final voltage distribution map. The present invention binds and reads all voltage threshold points uniformly, and only based on the read data, the voltage distribution can be quickly obtained, thereby judging whether the state of the physical block to be tested is abnormal.

Description

technical field [0001] The invention relates to the technical field of data storage, in particular to a voltage distribution analysis method based on read data. Background technique [0002] A solid-state drive (SSD), also known as a solid-state drive, is a hard drive made of a solid-state electronic storage chip array. It usually contains three large parts, namely the SSD main control chip, the flash memory particle array that stores data, and the cache chip. Compared with traditional mechanical hard disks, solid-state disks have the advantages of fast read and write speed, light weight, low energy consumption and small size, which make them widely used in consumer market, data center and enterprise market. [0003] The judgment voltage of NAND flash memory particles will directly affect the effectiveness of data storage. If testers can intuitively grasp the test results of voltage distribution, they can easily find the best judgment voltage applicable to the current physic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26G11C16/30G11C29/12
CPCG11C16/26G11C16/30G11C29/12G11C29/12005
Inventor 雷莉冯立晖廖莎
Owner 杭州阿姆科技有限公司
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