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Passivated photodiode comprising ferroelectric peripheral portion

A technology for photodiodes and peripheral parts, applied in circuits, electrical components, electro-solid devices, etc., which can solve the problems of inability to obtain dark current and the inability to reproducibly obtain the desired accumulation area.

Pending Publication Date: 2022-03-29
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the annealing in question may then not be able to reproducibly achieve the desired accumulation region and thus the desired reduction in dark current

Method used

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  • Passivated photodiode comprising ferroelectric peripheral portion
  • Passivated photodiode comprising ferroelectric peripheral portion
  • Passivated photodiode comprising ferroelectric peripheral portion

Examples

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Embodiment Construction

[0044] In the drawings and in the remainder of the specification, the same reference numerals designate the same or similar elements. Furthermore, to improve drawing clarity, various elements have not been shown to scale. Also, the respective embodiments and modifications are not mutually exclusive and may be combined with each other. Unless otherwise stated, "substantially", "about" and "approximately" mean within 10%, preferably within 5%. Also, the terms "...to..." and equivalents are meant to be inclusive, unless otherwise stated.

[0045] The present invention relates to a passivated photodiode, preferably a photodiode array and method of production. Each photodiode is preferably based on germanium and is designed to detect light radiation in the near infrared (SWIR, Short Wavelength IR) corresponding to the spectral range from 0.8 μm to about 1.7 μm or even about 2.5 μm.

[0046]The photodiode has a first surface and a second surface opposite to each other and paralle...

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Abstract

The invention relates to a photodiode comprising: a detection part (10) having a doped first region (11), a doped second region (12) and an intermediate region (13); a dielectric layer (30); and a semiconductor peripheral portion (25). The photodiode further comprises a ferroelectric peripheral portion (26.1) located between and in contact with the intermediate layer (13) and the dielectric layer (30) and located between the first region (11) and the semiconductor peripheral portion (25) and surrounding the first region (11) in a main plane.

Description

technical field [0001] The field of the invention is that of photodiodes passivated by a dielectric passivation layer. The invention finds particular application in the field of detection of optical radiation belonging to, for example, the near infrared, one or more photodiodes can then be based on germanium. Background technique [0002] The photodetection device may include an array of passivated photodiodes. The photodiodes then extend in the same principal plane between first and second opposing surfaces parallel to each other. They then each have a doped (eg n-doped) first region flush with the first surface and a doped second region (eg p-doped) and the second region aligned with The second surface is flush. The two doped regions are then separated from one another by an intrinsic intermediate region or a very lightly doped (eg p-doped) region. A passivation layer made of a dielectric material covers the first surface to limit the effect of dark current on the curr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0352H01L31/105H01L31/18H01L27/144
CPCH01L31/105H01L31/03529H01L31/1804H01L31/1868H01L31/02161H01L27/1443H01L27/1446H01L27/14649H01L27/14689H01L31/18
Inventor 阿卜杜卡迪尔·阿利亚内哈奇莱·卡亚
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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