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Semiconductor memory device

A memory and semiconductor technology, applied in the direction of semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of data storage layer reliability degradation and other issues

Pending Publication Date: 2022-04-05
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of manufacturing a three-dimensional nonvolatile memory device, the reliability of the data storage layer may be degraded to some extent

Method used

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  • Semiconductor memory device
  • Semiconductor memory device
  • Semiconductor memory device

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Experimental program
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Embodiment Construction

[0019] A specific structural or functional description disclosed herein is merely an illustration for describing an embodiment according to a concept of the present disclosure. Embodiments may be implemented in various forms and, therefore, possible embodiments should not be construed as limited to the embodiments set forth herein.

[0020] Hereinafter, the terms "first" and "second" are used to distinguish one component from another, not to indicate the number or order of the components. Accordingly, components should not be limited by these terms.

[0021] Some embodiments are directed to a semiconductor memory device capable of improving reliability of a data storage layer.

[0022] figure 1 is a block diagram illustrating a semiconductor memory device 10 according to an embodiment of the present disclosure.

[0023] refer to figure 1 , the semiconductor memory device 10 includes a peripheral circuit PC and a memory cell array 20 .

[0024] The peripheral circuit PC ma...

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Abstract

A semiconductor memory device includes: a tunnel insulating layer disposed between a conductive pattern and a channel layer; a data storage layer disposed between the conductive pattern and the tunnel insulating layer, the data storage layer including a silicon nitride layer; a first barrier insulating layer disposed between the conductive pattern and the data storage layer; a second barrier insulating layer disposed between the conductive pattern and the first barrier insulating layer; and a carbon-containing layer disposed at at least one of a position between the tunnel insulating layer and the data storage layer, a position between the first barrier insulating layer and the data storage layer, a position in the tunnel insulating layer, and a position between the first barrier insulating layer and the second barrier insulating layer.

Description

technical field [0001] The present disclosure relates generally to semiconductor memory devices, and more particularly, to nonvolatile semiconductor memory devices. Background technique [0002] A semiconductor memory device includes memory cells that store data. A memory cell of a nonvolatile memory device can retain stored data even if its power supply is interrupted. A memory cell of a nonvolatile memory device may include a data storage layer disposed between a gate and a channel. [0003] In order to increase the degree of integration of nonvolatile memory devices, three-dimensional nonvolatile memory devices including three-dimensionally arranged memory cells have been proposed. In the process of manufacturing the three-dimensional nonvolatile memory device, the reliability of the data storage layer may be degraded to some extent. Contents of the invention [0004] According to an embodiment of the present disclosure, a semiconductor memory device includes: a stac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11582
CPCH10B41/10H10B43/10H10B41/27H10B43/27H01L29/792H01L29/4234H10B43/35H01L29/518H01L29/40117H01L29/513
Inventor 宾真户权日荣权兑烘金锡周卢秀珍卢英辰朴宰吾吴镇镐刘东哲尹在珍李修炫全唯一
Owner SK HYNIX INC