Flash memory device programming operation method and device
A technology of a flash memory device and an operation method, which is applied in the field of memory and can solve problems such as the failure of the read "0" operation of a memory cell
Pending Publication Date: 2022-04-05
HUA HONG SEMICON WUXI LTD +1
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[0005] The present application provides a flash memory device programming operation method and device, which can solve the problem in the related art that the operation of reading "0" to the memory cell fails due to defects at the interface between the oxide layer under the floating gate and the silicon base layer. question
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[0030] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0031] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...
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The invention relates to the technical field of memories, in particular to a flash memory device programming operation method and a device for executing programming read operation of a memory unit. The method comprises the following steps in sequence: providing a storage unit of the flash memory device, the storage unit comprises a silicon substrate, a gate structure is formed on the silicon substrate, the gate structure comprises a first dielectric layer and a floating gate, the first dielectric layer is in contact with the upper surface of the silicon substrate, and the floating gate is arranged on the first dielectric layer; particles with positive charges are captured at the contact surface position of the first dielectric layer and the silicon substrate; performing first programming write operation on the storage unit to enable free electrons with negative charges to flow into the floating gate; performing baking operation on the storage unit, so that the free electrons with negative charges in the floating gate are combined with the particles with positive charges at the contact surface position, and the free electrons with negative charges in the floating gate are reduced; and performing second programming write operation on the storage unit, so that the free electrons with the negative charges flow into the floating gate again, and the free electrons with the negative charges in the floating gate are increased.
Description
technical field [0001] The present application relates to the technical field of memory, and in particular to a programming operation method of a flash memory device and a device for performing programming and reading operations on memory cells. Background technique [0002] Flash memory (Flash) is a non-volatile memory that can perform programming operations (Program) on storage cells (cell). Wherein, the programming operation includes a writing operation and a reading operation. When performing a programming and writing operation on a flash memory device, electrons may flow into the floating gate of the storage unit through a source channel hot carrier injection process of the storage unit, so that the floating gate Negative charge is stored in the gate, so that the storage state of the memory cell is programmed to "0". This operation is followed by a read operation to read out the data written in the memory cell by the previous write operation. [0003] However, if ther...
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IPC IPC(8): H01L29/788H01L21/336G11C16/10
Inventor 曹谢元吴苑王冠军徐杰高超
Owner HUA HONG SEMICON WUXI LTD