Polishing pad and polishing equipment for polishing silicon wafer

Abstract

The embodiment of the invention discloses a polishing pad for polishing a silicon wafer and polishing equipment, and the upper surface of the polishing pad comprises a circular first area located in the center of the polishing pad, and a circular second area located in the center of the polishing pad, the second area and the third area are concentric with the first area and are in a circular ring shape, and the second area is located between the first area and the third area in the radial direction; wherein a plurality of linear grooves are formed in each of the first region, the second region and the third region, the plurality of grooves are separated from one another through a plurality of linear groove gaps, and the first region, the second region and the third region are separated from one another through a plurality of linear groove gaps. The plurality of grooves and the plurality of groove gaps are arranged such that the amount of polishing liquid temporarily present on the surfaces of the grooves in the first region and the third region during polishing is greater than the amount temporarily present on the surfaces of the grooves in the second region.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a polishing pad and polishing equipment for polishing silicon wafers. Background technique [0002] In the process of producing silicon wafers, the final polishing (FP, Final Polishing) process is the last process for controlling the flatness and roughness parameters of silicon wafers. The final polishing process is to remove the front-end process defects by removing a certain amount on the surface of the silicon wafer and perform mirror polishing on the surface of the silicon wafer. [0003] During the FP operation, the most commonly used implementation is the chemical mechanical polishing (CMP, Chemical MechanicalPolishing) method, and in the CMP method, the silicon wafer needs to be pressed on a vibrating polishing table with a polishing pad by the polishing head, and simultaneously A slurry of abrasive particles is provided to the polishing pad. However,...

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Problems solved by technology

However, since the working pressure from the polishing head tends to be concentrated in the central area of ​​the polishing head, the distribution of the pressure transmitted to the surface of the silicon wafer to be polished is also uneven, wherein the central area of ​​the silicon wafer is subjected to a greater force than other areas. This causes the polishing removal amount of the central area of ​​the silicon wafer surface to be larger than that of the edge area of ​​the silicon wafer surface during the polishing process of the silicon wafer, thereby causing the deterioration of the flatness of the silicon wafer surface

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