Model theory spectrum calculation method and device

Abstract

The invention provides a model theory spectrum calculation method and device. The model theory spectrum calculation method comprises the following steps: establishing a sample morphology model, and establishing an XOZ plane coordinate system; acquiring a plane contour of the sample morphology model in an XOZ plane coordinate system; acquiring a plurality of sampling points on the plane contour, and forming an initial point set according to the plurality of sampling points; obtaining a Z coordinate hierarchical value set according to the initial point set; and calculating a theoretical spectrum according to the Z-coordinate hierarchical value set. According to the model theory spectrum calculation method, the plane contour of the sample morphology model in the XOZ plane coordinate system is obtained, the multiple sampling points in the plane contour are recorded, the initial point set is formed according to the multiple sampling points, layering is carried out according to the Z coordinate value of the initial point set, the sample morphology model can be layered at the position where the line shape changes, and the accuracy of the model theory spectrum calculation is improved. And then theoretical spectrum calculation is carried out according to the layering value, so that the division number of slice layers is reduced while the precision is ensured, and the theoretical spectrum calculation speed can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a model theoretical spectrum calculation method and device. Background technique [0002] As the semiconductor industry continues to advance to deep submicron technology nodes, the line width of integrated circuits continues to shrink, and the structural design of integrated circuit devices becomes more and more complex. Fully functional circuits and high-speed operating devices can only be obtained through strict process control. [0003] Optical critical dimension measurement technology is an important part of advanced process control in the current semiconductor manufacturing process. It has the advantages of fast speed, low cost, and non-destructiveness. It has important applications in advanced process control of semiconductor manufacturing. Optical critical dimension measurement technology is a model-based method, so fast and accurate optical characteri...

AI Technical Summary

Problems solved by technology

The disadvantage of using the equal slice height method is that the first pair of complex features and other contour areas use the same division height, in order to achieve the required calculation accuracy, more slices will be divided, thereby reducing the calculation speed

Second, the layering of the corners containing the contours, such as Figure 4 As shown, approximating the corner as a rectangular sheet will lose some accuracy

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