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Grid-control avalanche rapid closing IGBT and symmetric structure thereof

A fast-closing, symmetrical structure technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problems of too long pulse front, limit the rising speed of collector current, slow IGBT turn-on speed, etc., to shorten the pulse front and improve the pulse The effect of source performance

Pending Publication Date: 2022-04-15
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the turn-on speed of the traditional IGBT is slow, and the collector current will gradually increase with the formation of the inversion layer under the gate, which limits the rising speed of the collector current
Applying this traditional IGBT to a pulsed power system will result in too long a pulse leading edge, affecting the performance of the pulsed source

Method used

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  • Grid-control avalanche rapid closing IGBT and symmetric structure thereof
  • Grid-control avalanche rapid closing IGBT and symmetric structure thereof
  • Grid-control avalanche rapid closing IGBT and symmetric structure thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029] See figure 2 , figure 2 It is a schematic structural diagram of a gate-controlled avalanche fast closing IGBT provided by an embodiment of the present invention, which includes a collector metal 1, a substrate 2, a first epitaxial layer 3, a second epitaxial layer 4, and a third epitaxial layer from top to bottom 5. Emitter metal 6 and gate metal 7; wherein,

[0030] The third epitaxial layer 5 is provided with a first doped region 51, a second doped region 52 and a third doped region 53;

[0031] The first doped region 51 starts from the upper surface of the third epitaxial layer 5 and extends downward to the lower surface of the third epitaxial layer 5;

[0032] The second doped region 52 starts from the upper left corner of the third epitaxial layer 5 and extends downward and rightward to the inside of the third epitaxial layer 5 , and has a certain distance from the first doped region 51 , while forming a first drift region 54 in the part of the third epitaxial...

Embodiment 2

[0050] On the basis of the first embodiment above, this embodiment provides a symmetrical structure of a gate-controlled avalanche fast closing IGBT. See Figure 4 , Figure 4 It is a schematic diagram of a symmetrical structure of a gate-controlled avalanche fast-closing IGBT provided by an embodiment of the present invention, which includes the gate-controlled avalanche fast-closing IGBT provided by the first embodiment above in which two first doped regions 51 are adjacent and symmetrically arranged; A gate dielectric layer 9 , a gate 8 and a gate metal 7 are sequentially disposed above the first doped region 51 .

[0051] It can be seen that the symmetrical structure of the gate-controlled avalanche fast closing IGBT provided in this embodiment is symmetrically formed by the gate-controlled avalanche fast closing IGBT provided in the first embodiment above, and a MOS structure is also formed above the first doped region, thus This embodiment also has the advantages of th...

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Abstract

The invention discloses a grid-control avalanche rapid closing IGBT which sequentially comprises collector metal, a substrate, a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, emitter metal and grid metal from bottom to top. Wherein a first doped region, a second doped region and a third doped region are arranged in the third epitaxial layer; the first doped region starts from the upper surface of the third epitaxial layer and extends downwards to the lower surface of the third epitaxial layer; the second doped region starts from the upper left corner of the third epitaxial layer and extends downwards and downwards into the third epitaxial layer, and a certain interval is formed between the second doped region and the first doped region; the third doped region is located in the second doped region and has a certain interval with the left and right sides of the second doped region; the emitter metal is located above a part of the second doped region and a part of the third doped region; and the gate metal is positioned above the third epitaxial layer between the second doped region and the first doped region. In a pulse power system, compared with a traditional IGBT, the avalanche closed IGBT provided by the invention has the advantages that the pulse front edge can be remarkably shortened, and the pulse source performance is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a gate-controlled avalanche fast closing IGBT and its symmetrical structure. Background technique [0002] With the deepening of technical research, pulse power technology has gradually appeared in industrial production. At present, pulse power has been widely used in many fields such as environmental protection, aerospace, biomedicine, resource mining, military industry, and national defense. Pulse power switch is the core of pulse power technology. With the deepening of semiconductor theory research and the maturity of semiconductor manufacturing process, semiconductor switch has occupied an important position in pulse power switch. Semiconductor switches used in the field of pulse power technology are called semiconductor pulse power devices. [0003] Traditional semiconductor pulse power devices mainly include GTO (Gate-Turn-Off Thyristor, gate-level turn-off t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06
Inventor 汤晓燕郭登耀宋庆文张玉明
Owner XIDIAN UNIV
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