Grid-control avalanche rapid closing IGBT and symmetric structure thereof

Abstract

The invention discloses a grid-control avalanche rapid closing IGBT which sequentially comprises collector metal, a substrate, a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, emitter metal and grid metal from bottom to top. Wherein a first doped region, a second doped region and a third doped region are arranged in the third epitaxial layer; the first doped region starts from the upper surface of the third epitaxial layer and extends downwards to the lower surface of the third epitaxial layer; the second doped region starts from the upper left corner of the third epitaxial layer and extends downwards and downwards into the third epitaxial layer, and a certain interval is formed between the second doped region and the first doped region; the third doped region is located in the second doped region and has a certain interval with the left and right sides of the second doped region; the emitter metal is located above a part of the second doped region and a part of the third doped region; and the gate metal is positioned above the third epitaxial layer between the second doped region and the first doped region. In a pulse power system, compared with a traditional IGBT, the avalanche closed IGBT provided by the invention has the advantages that the pulse front edge can be remarkably shortened, and the pulse source performance is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a gate-controlled avalanche fast closing IGBT and its symmetrical structure. Background technique [0002] With the deepening of technical research, pulse power technology has gradually appeared in industrial production. At present, pulse power has been widely used in many fields such as environmental protection, aerospace, biomedicine, resource mining, military industry, and national defense. Pulse power switch is the core of pulse power technology. With the deepening of semiconductor theory research and the maturity of semiconductor manufacturing process, semiconductor switch has occupied an important position in pulse power switch. Semiconductor switches used in the field of pulse power technology are called semiconductor pulse power devices. [0003] Traditional semiconductor pulse power devices mainly include GTO (Gate-Turn-Off Thyristor, gate-level turn-off t...

AI Technical Summary

Problems solved by technology

However, the turn-on speed of the traditional IGBT is slow, and the collector current will gradually increase with the formation of the inversion layer under the gate, which limits the rising speed of the collector current

Applying this traditional IGBT to a pulsed power system will result in too long a pulse leading edge, affecting the performance of the pulsed source

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